28-nm 2T High-<formula formulatype="inline"><tex Notation="TeX">$K$</tex></formula> Metal Gate Embedded RRAM With Fully Compatible CMOS Logic Processes

Abstract

A new two-transistor embedded resistive RAM (RRAM) cell with fully Taiwan Semiconductor Manufacturing Company 28-nm CMOS logic compatible process is reported. The new 28-nm logic compatible RRAM cell consists of two logic standard high-k metal gate (HKMG) CMOS transistors with a composite resistive gate dielectric of TiN/HfO 2 /SiO 2 /Si as a resistive memory storage node. Using one of the transistor gates as a source line in RRAM SET/RESET operation, the resistive memory states can be efficiently read and sensed by selecting the other transistor gate and its corresponding bitline. Therefore, the new 2T embedded RRAM cell has realized a logic nonvolatile memory (NVM) solution with cost effective, and fully compatible with 28-nm HKMG CMOS logic platforms. Besides, through adapting the existing high-K gate dielectric in the RRAM cell, the embedded memory cell does not need any additional deposition of resistive film or extra process steps and it will be very scalable and compatible with the fast progress of CMOS technologies in embedded NVM applications. Furthermore, its low voltage requirement makes this cell conveniently fit in logic intellectual properties and circuits for local data storages or level trimming devices on system-on-chip logic NVM products.Index Terms-28-nm high-k metal gate (HKMG) CMOS logic process, embedded resistive RAM (RRAM), nonvolatile memory.

Resistive switching memory for high density storage and computing*

“…Because of its logic based integration manner, the 1T1R structure becomes a rational choice for embedded application. [15][16][17][18][19][20] However, the transistor consumes silicon area and is incapable of multi-layer stack, making the 1T1R structure difficult for 3D integration. There are also some reports combining the passive and active integrations together by adopting such a structure named 1TxR with a purpose of better performance and higher density.…”

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

“…In recent years, RRAM with advantages of simple structure, superior scalability and high compatibility to advanced CMOS processes has become one of the core technologies for realizing embedded non-volatile memory modules [1][2][3][4][5][6][7][8]. RRAM featuring high cyclability can extend its applications to systems which required to update non-volatile data more frequently, such as computing-in-memory and neuromorphic systems [9][10][11][12][13][14][15].…”

Reset Variability in Backfilled Resistive Random Access Memory and Its Correlation to Low Frequency Noise in Read

“…In recent years, resistive random access memory (RRAM) has been regarded as a promising solution with very competitive features for meeting the needed to expanding embedded nonvolatile storage demands [1]- [3]. With advantages such as its simple structure, superior scalability and high compatibility to CMOS processes, RRAM becomes very competitive for various embedded non-volatile memory applications [4]- [6].…”