2020
DOI: 10.1016/j.apcatb.2020.119006
|View full text |Cite
|
Sign up to set email alerts
|

2D/2D/0D TiO2/C3N4/Ti3C2 MXene composite S-scheme photocatalyst with enhanced CO2 reduction activity

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

4
368
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
7
2

Relationship

2
7

Authors

Journals

citations
Cited by 739 publications
(372 citation statements)
references
References 64 publications
4
368
0
Order By: Relevance
“…Beside immobilization of BiOI, coupling BiOI with a nonmetal co-catalyst to construct an S-scheme heterojunction is also an effective way to improve its performance 11, [29][30][31][32][33][34][35][36][37] . Usually, semiconductors with narrow band gap are employed as the cocatalyst in building S-scheme heterojunctions, such as CdS, MoS2, C3N4, and Bi2O3 [38][39][40][41] . In fact, graphene quantum dots (GQDs) can also act as the co-catalyst in constructing S-scheme heterojunctions.…”
Section: Introductionmentioning
confidence: 99%
“…Beside immobilization of BiOI, coupling BiOI with a nonmetal co-catalyst to construct an S-scheme heterojunction is also an effective way to improve its performance 11, [29][30][31][32][33][34][35][36][37] . Usually, semiconductors with narrow band gap are employed as the cocatalyst in building S-scheme heterojunctions, such as CdS, MoS2, C3N4, and Bi2O3 [38][39][40][41] . In fact, graphene quantum dots (GQDs) can also act as the co-catalyst in constructing S-scheme heterojunctions.…”
Section: Introductionmentioning
confidence: 99%
“…Among the semiconductors with high valence band (VB) potential, TiO 2 , as an ultraviolet‐responsive semiconductor with a bandgap of 3.2 eV, is the most studied photocatalytic semiconductor. [ 24–28 ] As its energy band structure is capable of forming S‐scheme with g‐C 3 N 4 , a wide range of g‐C 3 N 4 /TiO 2 composites have been synthesized for CO 2 reduction, [ 27 ] organics degradation, [ 29–33 ] H 2 production, [ 34,35 ] and N 2 O decomposition. [ 36 ] Although the g‐C 3 N 4 /TiO 2 composites have various morphologies, the contact modes of g‐C 3 N 4 and TiO 2 can be simply classified as point‐to‐face contact [ 32 ] and face‐to‐face contact.…”
Section: Introductionmentioning
confidence: 99%
“…[ 36 ] Although the g‐C 3 N 4 /TiO 2 composites have various morphologies, the contact modes of g‐C 3 N 4 and TiO 2 can be simply classified as point‐to‐face contact [ 32 ] and face‐to‐face contact. [ 27,29,37 ] As the specific 1D electron transfer and narrow point‐to‐face transfer channel greatly reduce the electron transfer efficiency, an efficient face‐to‐face contact was adopted in more g‐C 3 N 4 /TiO 2 composites. As the intensity of light decays exponentially in a semiconductor, g‐C 3 N 4 /TiO 2 composites with hollowsphere structure, [ 37 ] porous structure, [ 38 ] and flower structure [ 39 ] were widely prepared to increase their specific surface area.…”
Section: Introductionmentioning
confidence: 99%
“…3b displays the high-resolution C 1s spectrum, in which two peaks are located at 284.8 and 288.3 eV, respectively. The peak at 288.3 eV is attributed to the sp 2 -hybridized carbon 14, 30,31 . While the peak at 284.8 eV is assigned to adventitious carbon on the surface 32 .…”
Section: Xps and Elemental Analysesmentioning
confidence: 99%