2D analytical calculation of the electrostatic potential in lightly doped Schottky barrier Double-Gate MOSFET

2D analytical calculation of the electric field in lightly doped Schottky barrier double-gate MOSFETs and estimation of the tunneling/thermionic current

“…The approach detailed in this paper is sufficient for use with channel lengths greater or equal to 22 nm. We also show an extension and improvement of the estimation in [14] for the tunneling current. In [15] explicit equations for the calculation of the tunneling current are given, however these equations are only valid for long channel devices.…”

“…In [12] we presented an analytical closed-form model for the electrostatic potential of a SB-DG-MOSFET for subthreshold region, which is also based on the conformal mapping technique. We showed a compact solution, while we are applying 2-corner structures.…”

“…Channel lengths down to 22 nm have been simulated in this study. In [14] a first approach for the calculation of the tunneling current depending on the solutions of the electrostatic potential and electric field we obtained with our solutions is given.…”

“…In this paper, we extend the model for the potential by using the approach for the single vertex [12] and present a model for the electric field derived by using the conformal mapping technique for Schottky barrier (SB) and 2-corner structures. By solving the device with 2-corner structures we receive a mathematically simple approach with which we are able to analytically evaluate the electric field and the corresponding tunneling probability at the S/D junctions, and at least the tunneling current.…”

An analytical expression of electric potential and field of organic thin film transistors

“…Organic semiconductors usually are unipolar. As they are lightly doped ρ is very small and can be set to zero [3]. Thus, ρ = 0 and the Poisson equation becomes the Laplace equation…”