2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

Hou, Xianghui; Chen, Huawei; Zhang, Zhenhan; Wang, Shuiyuan; Zhou, Peng

doi:10.1002/aelm.201800944

Cited by 33 publications

(26 citation statements)

References 124 publications

(228 reference statements)

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“…applications including post-complementary metal-oxide semiconductor (CMOS) logic, [1][2][3] memory, [4][5][6] flexible electronics, [7,8] and hardware-relevant artificial intelligence development. [9][10][11] The carrier mobility (μ) is a central parameter in characterizing electron and hole transport in a material.…”

Section: Introductionmentioning

confidence: 99%

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices—Avoiding Contact Resistance Implicated Overestimation

Pang

Zhou

Liu

et al. 2021

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Schottky barrier (SB) transistors operate distinctly different from conventional metal‐oxide semiconductor field‐effect transistors, in a unique way that the gate impacts the carrier injection from the metal source/drain contacts into the channel region. While it has been long recognized that this can have severe implications for device characteristics in the subthreshold region, impacts of contact gating of SB in the on‐state of the devices, which affects evaluation of intrinsic channel properties, have been yet comprehensively studied. Due to the fact that contact resistance (RC) is always gate‐dependent in a typical back‐gated device structure, the traditional approach of deriving field‐effect mobility from the maximum transconductance (gm) is in principle not correct and can even overestimate the mobility. In addition, an exhibition of two different threshold voltages for the channel and the contact region leads to another layer of complexity in determining the true carrier concentration calculated from Q = COX * (VG–VTH). Through a detailed experimental analysis, the effect of different effective oxide thicknesses, distinct SB heights, and doping‐induced reductions in the SB width are carefully evaluated to gain a better understanding of their impact on important device metrics.

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Section: Introductionmentioning

confidence: 99%

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices—Avoiding Contact Resistance Implicated Overestimation

Pang

Zhou

Liu

et al. 2021

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“…Although these devices mainly take advantage of the ambipolar nature of the materials to develop carrier-type-sensitive devices, other characteristics, like charges mobility, semiconductor bandgap, light absorptivity, optoelectronic converting efficiency, are also significant for specific device functions. In the future, maybe we can consider other properties of ambipolar 2D semiconductors to explore more devices with novel functions, like magnetoelectronic, [274][275][276][277] spintronic, [278] neural devices and sensors, [53,279] and even with multiple functions with programmable, reconfigurable, memorable and sensible abilities. [51,53,280]…”

Section: Discussionmentioning

confidence: 99%

Ambipolar 2D Semiconductors and Emerging Device Applications

Sheng

Hou

et al. 2020

Small Methods

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the emergence of nanoscience and technology. Reviewing the history over the past 60 years, new devices based on new materials and new physics have been driving the development of integration circuits (ICs) along the Moore's law. Therefore, it has always been a frontier to explore new materials and novel physical properties that can help to push forward the development of ICs. In addition, currently, the multiple requirements for ICs are becoming increasingly important, such as flexible, transparent, and wearable. Just in this context, graphene, an ultrathin graphitic layer with a honeycomb structure, has aroused a wide attention since its discovery, which was demonstrated as a metallic transistor and proposed for high-frequency electronic circuits. [1] Due to its outstanding electronic, optical and mechanical properties, graphene was highly expected as a material to meet the increasing requirements for high-performance flexible, transparent and wearable electronic and optoelectronic devices. [2-8] The emergence of graphene inspired researchers to look for other 2D materials from van der Waals solids (VDWSs) since the one-atomic-layer graphene was revealed to be thermodynamically stable under ambient conditions. Up to now, 2D atomic crystals have been found in various VDWSs like hexagonal boron nitride (hBN), black phosphorus (BP), metal dichalcogenides (MDCs, like MoS 2 , WSe 2 , MoTe 2 , SnS 2 , and so on), and layered oxide, the basic of which can be seen in hundreds of reviews. [9-16] These graphene-like 2D materials are the thinnest crystals with the thickness usually less than 1 nm. They often exhibit distinctive properties different from conventional bulk materials. For example, bulk MoS 2 is of indirect bandgap but the monolayer is of direct one; [17,18] the bandgap of few layer semiconducting 2D layers often increases with the thickness decreasing, and can be modulated by electric field; [19-23] theoretical calculations indicate that the sunlight absorptivity of MDC monolayers like MoS 2 , MoSe 2 , and WS 2 is up to 5-10% that is 1 order higher than Si and GaAs, enabling them promising for ultrathin optoelectronic devices. [24] Besides, the 2D family covers a wide conductive range from metals, semimetals, semiconductors to insulators, offering a possibility to construct ultrathin devices totally based on 2D crystals. [25-27] And, as the study continues With the rise of 2D materials, new physics and new processing techniques have emerged, triggering possibilities for the innovation of electronic and optoelectronic devices. Among them, ambipolar 2D semiconductors are of excellent gate-controlled capability and distinctive physical characteristic that the major charge carriers can be dynamically, reversibly and rapidly tuned between holes and electrons by electrostatic field. Based on such properties, novel devices, like ambipolar field-effect transistors, lightemitting transistors, electrostatic-field-charging PN diodes, are developed and show great advantages in logic and reconfigurable circuits, integrate...

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“…The distinct structure, anisotropy, and reactive edge chemistry of layered MCs make them suitable for a plethora of applications like electronic and optoelectronic devices, [7] chemical sensors, [8] electrocatalysts, [9] energy storage, [10] and novel spintronic and valleytronic [11] devices. Depending on their chemical configuration and phase structure, the physicochemical properties of layered MCs can be tuned in numerous ways to obtain desired device operation.…”

Section: Introductionmentioning

confidence: 99%

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

et al. 2021

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Layered metal chalcogenide materials, such as MoS2 and Bi2Te3, have found important applications as 2D materials in emerging electronic devices. To create nanoscale layered chalcogenide materials with precisely controlled structures and properties, it is critical to understand and control how they evolve and transform under various conditions. This Minireview presents an overview of recent research focused on using in situ characterization to understand the atomic‐scale details of transformations during growth, under exposure to reactive chemical and thermal environments, and on interfacing with other materials. These efforts have used techniques including in situ transmission electron microscopy (TEM), X‐ray spectroscopy, and optical methods to understand nanoscale transformations. These in situ studies have provided a substantially improved understanding of transformation mechanisms in layered chalcogenide materials, which is an important step toward the use of these interesting materials in a variety of electronic and electrochemical devices.

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2D Atomic Crystals: A Promising Solution for Next‐Generation Data Storage

Cited by 33 publications

References 124 publications

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices—Avoiding Contact Resistance Implicated Overestimation

Mobility Extraction in 2D Transition Metal Dichalcogenide Devices—Avoiding Contact Resistance Implicated Overestimation

Ambipolar 2D Semiconductors and Emerging Device Applications

In Situ Characterization of Transformations in Nanoscale Layered Metal Chalcogenide Materials: A Review

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