2D Bi$_{2}$$O_{2}$Se Based Highly Selective and Sensitive Toxic Non-Condensable Gas Sensor

Sirohi, Ankit; Singh, Jawar

doi:10.1109/tnano.2022.3226507

Cited by 6 publications

(2 citation statements)

References 32 publications

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“…The principal peak aligns with the standard tetragonal Bi 2 O 2 Se structure (PDF#731316). Additionally, the presence of a minor peak at approximately 28 • corroborates the existence of Bi 2 O 3 as a secondary phase within the Te-doped specimens, as substantiated by references [48,49]. Through strategic labeling of key peak positions, it becomes evident that the progressive increase in Te substitution concentration corresponds to a gradual shift of most peak values towards lower angles.…”

Section: Characterization Of Te-doped Bi 2 O 2 Sesupporting

confidence: 63%

Optimizing Thermoelectric Performance of Hybrid Crystals Bi2O2Se1−xTex in the Bi2O2X System

Xie,

Ma,

Zhou

2024

Materials

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In addressing the global need for sustainable energy conversion, this study presents a breakthrough in thermoelectric materials research by optimizing the Bi2O2Se1–xTex system in the Bi2O2Se/Bi2O2Te pseudobinary series. Leveraging the principles of innovative transport mechanisms and defect engineering, we introduce tellurium (Te) doping into Bi2O2Se to enhance its thermoelectric properties synergistically. With the help of various advanced characterization tools such as XRD, SEM, TEM, XPS, FTIR, TGA, LFA, and DSC, combined with relevant resistance and density measurement techniques, we conducted an in-depth exploration of the complex interactions between various factors within thermoelectric materials. We recognize that the balance and synergy of these factors in the thermoelectric conversion process are crucial to achieving efficient energy conversion. Through systematic research, we are committed to revealing the mechanisms of these interactions and providing a solid scientific foundation for the optimal design and performance enhancement of thermoelectric materials. Finally, the advantage coefficient (ZT) of the thermoelectric material has been significantly improved. The crystallographic analysis confirms the formation of a continuous series of mixed crystals with varying Te concentrations, adhering to Vegard’s law and exhibiting significant improvements in electrical and thermal conductivities. The Bi2O2Se1–xTex crystals, particularly the Bi2O2Se0.6Te0.4 composition, demonstrate a peak ZT of 0.86 at 373 K. This achievement aligns with recent advancements in defect-enabled mechanisms and band convergence and sets a new standard for high-performance thermoelectrics. The study’s findings contribute significantly to the ongoing quest for efficient thermal-to-electrical energy conversion, offering a promising avenue for future sustainable energy technologies.

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Section: Characterization Of Te-doped Bi 2 O 2 Sesupporting

confidence: 63%

Optimizing Thermoelectric Performance of Hybrid Crystals Bi2O2Se1−xTex in the Bi2O2X System

Xie,

Ma,

Zhou

2024

Materials

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“…Sirohi et al calculated the interaction energies of the Bi 2 O 2 Se ML and different gas molecules to determine the selectivity. 77 The vacancy less (VL) Bi 2 O 2 Se ML layer shows selectivity towards NO 2 because of the lowest absorption energy of −0.48 eV. The Bi 2 O 2 Se ML with Se vacancies (SV) shows the lowest absorption energy of −1.59 eV for NO gas molecules.…”

Section: Sensing Applicationsmentioning

confidence: 99%

Recent advances in bismuth oxychalcogenide nanosheets for sensing applications

Kumar Shringi,

Kumar,

Yan

2024

Nanoscale

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Effect of Defects to Tailor the Structural and Electronic Properties of Zigzag GaN Nanoribbons

Nemu,

Jaiswal

2024

Advcd Theory and Sims

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In the present manuscript, the effect of vacancy and Stone‐Wales defects (SWD) on the structural and electronic properties of zigzag GaN nanoribbons (ZGaNNR) is investigated. Apart from the conventional SWD ( rotation of formula unit), the rotation of formula unit i.e., Ga–N by and is also considered, which revealed remarkable findings. It is observed that the incorporation of considered defects is an exothermic process and the proposed structures are energetically feasible to be obtained. The considered vacancy defects settled in a magnetic ground state while the SWD always prefer a non‐magnetic state. The observed magnetic state is always stable by more than 400 meV compared to the corresponding non‐magnetic state. Furthermore, N‐vacancy defect is energetically preferred over Ga‐vacancy as well as the SWD. The electronic properties of ZGaNNR are highly influenced by the incorporation of vacancy or SWD. A semiconductor to metallic transition for vacancy defects whereas reduction in the bandgap has been witnessed for SWD. A direct to indirect conversion as well as spin polarization was also noticed in the selected geometries. The findings indicate that apart from tailoring the electronic properties, these defects can also be used for the realization of magnetic semiconductors for potential spintronic applications.

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2D Bi$_{2}$$O_{2}$Se Based Highly Selective and Sensitive Toxic Non-Condensable Gas Sensor

Cited by 6 publications

References 32 publications

Optimizing Thermoelectric Performance of Hybrid Crystals Bi2O2Se1−xTex in the Bi2O2X System

Optimizing Thermoelectric Performance of Hybrid Crystals Bi2O2Se1−xTex in the Bi2O2X System

Recent advances in bismuth oxychalcogenide nanosheets for sensing applications

Effect of Defects to Tailor the Structural and Electronic Properties of Zigzag GaN Nanoribbons

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