Single-atom
adsorbents (SAAs) featuring maximized atom utilization
and uniform isolated adsorption sites have aroused extensive research
interest in recent years as a novel class of adsorption materials
research. Nevertheless, it is still challenging to gain a fundamental
understanding of the complicated behaviors of SAAs for adsorbing thiophenic
compounds (THs). Herein, this work systematically investigated the
mechanisms of adsorption desulfurization (ADS) over a single group
IIIA metal atom (Ga, In, and Tl) anchored on hexagonal boron nitride
nanosheets (BNNSs) via density functional theory (DFT) calculations.
First, all the possible doping sites have been considered and their
stabilities have been evaluated by the doped energy. DFT calculations
reveal that metal atoms prefer to substitute B atoms on BNNSs rather
than N atoms. Additionally, SAAs all exhibit considerably enhanced
adsorption capacity for THs primarily by the sulfur-metal (S–M)
bond with π–π interactions maintained. Among them,
In-atom-based SAAs would be adequate to provide the highest adsorption
energy (In_cen_B, −40.1 kcal mol–1). Furthermore,
from the perspective of adsorption energy, the SAAs show superior
selectivity to THs than aromatic compounds due to the newly formed
S–M bond. We hope that our work will manifest the design and
application of SAAs in the field of ADS and shed light on a new strategy
for fabricating SAAs based on BNNSs.