2D Dual Gate Field‐Effect Transistor Enabled Versatile Functions

Abstract

Advanced computing technologies such as distributed computing and the Internet of Things require highly integrated and multifunctional electronic devices. Beyond the Si technology, 2D‐materials‐based dual‐gate transistors are expected to meet these demands due to the ultra‐thin body and the dangling‐bond‐free surface. In this work, a molybdenum disulfide (MoS2) asymmetric‐dual‐gate field‐effect transistor (ADGFET) with an In2Se3 top gate and a global bottom gate is designed. The independently controlled double gates enable the device to achieve an on/off ratio of 106 with a low subthreshold swing of 94.3 mV dec−1 while presenting a logic function. The coupling effect between the double gates allows the top gate to work as a charge‐trapping layer, realizing nonvolatile memory (105 on/off ratio with retention time over 104 s) and six‐level memory states. Additionally, ADGFET displays a tunable photodetection with the responsivity reaching the highest value of 857 A W−1, benefiting from the interface coupling between the double gates. Meanwhile, the photo‐memory property of ADGFET is also verified by using the varying exposure dosages‐dependent illumination. The multifunctional applications demonstrate that the ADGFET provides an alternative way to integrate logic, memory, and sensing into one device architecture.

Vacuum-Free Liquid-Metal-Printed 2D Semiconducting Tin Dioxide: The Effect of Annealing

“…Although the FET performance of the device reported here is not the highest, the annealed 2D SnO 2 significantly surpasses many previously reported transparent semiconducting oxide films. Better device performance can be achieved either by optimizing the semiconductor–insulator interface by using a high- k dielectric layer or engineering the device architecture. − …”

Engineering Graphene Phototransistors for High Dynamic Range Applications

“…While the use of interdigitated finger structures has been demonstrated for enhanced photocarrier generation and collection and reduction of the contact resistance in 2D-material-based photodetectors, − a study on how the dimensions of interdigitated finger structures influences photodetectors based on the photogating mechanism is still missing. Furthermore, double-gate structures have been employed in various photogating-based 2D-material photodetectors for controlling charge carrier distribution; ,, however, a study on the advantages of electrostatic doping for performance enhancements in interfacial photogating-based devices remains absent. Finally, a discussion on the potential of nonlinear power dependence and on its advantages for high dynamic range applications is still lacking.…”