2D ferromagnetism in europium/graphene bilayers

Sokolov, Ivan S.; Averyanov, Dmitry V.; Parfenov, Oleg E.; Karateev, Igor A.; Талденков, А. Н.; Tokmachev, Andrey M.; Storchak, Vyacheslav G.

doi:10.1039/c9mh01988j

Cited by 40 publications

(61 citation statements)

References 57 publications

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Section: Synthesis Methodsmentioning

confidence: 99%

“…For every single layer of graphene in EuC 6 , the ratio between Eu and C needs to be chemical stoichiometry. [ 73 ] The lattice of RETe 3 (an example of REC) is weakly orthorhombic, which belongs to Cmcm 9 space group. RETe 3 is composed by square planar Te sheets and double‐corrugated RETe slabs (Figure 1c).…”

Section: Crystal Structuresmentioning

confidence: 99%

“…demonstrated the 2D FM of EuC 6 , which is similar to that in EuSi 2 and EuGe 2 (Figure 6d–f). [ 73 ] Excitingly, EuC 6 are particularly sensitive to a low magnetic field due to the easy‐plane anisotropy. For Eu 2+ combined systems, this is common as Eu 2+ carries L = 0, which will rule out any magnetocrystalline anisotropy.…”

Section: Properties and Applicationsmentioning

confidence: 99%

“…[76] Recently, these two methods have also been applied for 2D RE materials. [73,79] With MBE methods, Storchak et al achieved the growth of EuC 6 monolayer (Figure 3a,b). [73] To avoid unwanted Eu intercalation between the graphene sheet and the substrate, the exposure time and the deposition speed of Eu are both significant factors.…”

Section: Mbe and Pldmentioning

confidence: 99%

“…[73,79] With MBE methods, Storchak et al achieved the growth of EuC 6 monolayer (Figure 3a,b). [73] To avoid unwanted Eu intercalation between the graphene sheet and the substrate, the exposure time and the deposition speed of Eu are both significant factors. The cross-sectional scanning transmission electron microscopy (STEM) images verify that graphene is at the bottom of Eu atoms, which indicates the suppression of intercalation.…”

Section: Mbe and Pldmentioning

confidence: 99%

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Recent Advances in 2D Rare Earth Materials

Chen

Han

Zhao

et al. 2020

Adv Funct Materials

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2D rare earth (RE) materials have received considerable attention in recent years due to the fascinating luminescence, magnetism, and electric properties originated from RE associated with sharp and various emission peaks, intrinsic 2D ferromagnetism, and incommensurate charge density wave. These materials might open up a new prospect in next‐generation lighting, magnetic devices, and phototransistors. Herein, a comprehensive review of 2D RE materials is presented, focusing on their recent progresses. First, the crystal structures of 2D RE materials are discussed. Then, typical synthesis methods such as mechanical exfoliation, molecular beam epitaxy, pulsed laser deposition, and chemical vapor deposition are introduced. Furthermore, various properties in luminescence, magnetism, and electronics are summarized. The recently reported RE‐based 2D novel photodetectors are outlined as three constructions: MoS2/RE, graphene/RE, and perovskite/RE, which show promising applications for both narrow and broad band detection arised from the special absorption windows of different RE elements. Finally, the conclusions and outlook of this area are proposed, such as exploring novel 2D RE compounds, improving stability, and broadening applications.

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Section: Synthesis Methodsmentioning

confidence: 99%

Section: Crystal Structuresmentioning

confidence: 99%

Section: Properties and Applicationsmentioning

confidence: 99%

Section: Mbe and Pldmentioning

confidence: 99%

Section: Mbe and Pldmentioning

confidence: 99%

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Recent Advances in 2D Rare Earth Materials

Chen

Han

Zhao

et al. 2020

Adv Funct Materials

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Ferromagnetic Elements in Two‐Dimensional Materials: 2D Magnets and Beyond

Papavasileiou,

Menelaou,

Sarkar

et al. 2023

Adv Funct Materials

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Ferromagnetism in 2D materials has attracted tremendous interest from the scientific community thanks to its potential for the design of magnetic materials with unique properties. The presence of a ferromagnetic element in a 2D material can improve the existing properties and offer new ones, giving rise to the development of manifold applications. This review focuses on recent advances and perspectives of 2D materials that bear at least one ferromagnetic element (iron, cobalt, nickel) as i) structural constituent, ii) dopant atom, or iii) adjacent atom through proximity effect. By describing in detail the magnetic properties that have emerged so far, their potential to form next‐generation 2D magnets is discussed. Moreover, the contribution of such 2D materials is analyzed in various applications (electrochemical, photochemical, optical, and electronic), aiming to explore further functionalities and capabilities of ferromagnetic elements, apart from their magnetic nature. Special attention is given to gadolinium and other rare earth elements that display a ferromagnetic order even at ultra‐low temperatures and form part of 2D structured materials, with particularly appealing properties deriving from their 4f electrons.

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Probing Ferrimagnetic Semiconductor with Enhanced Negative Magnetoresistance: 2D Chromium Sulfide

Moinuddin

Srinivasan

Sharma

2021

Adv Elect Materials

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Magnetic 2D materials have emerged as a great interest in spintronics due to atomic thickness scaling, low energy switching, and ease in the manipulation of spins. This report demonstrates a facile, bottom‐up, chemical vapor deposition approach for non‐van der Waals (non‐vdWs), 2D chromium (III) sulfide (Cr2S3) with c‐axis orientation, out‐of‐plane magnetic anisotropy (easy axis), and ferrimagnetic ordering. Importantly, the anisotropic magnetic saturation and resistivity of 10.23 mΩ cm reveal a narrow bandgap ferrimagnetism in Cr2S3 (∆EActivation ≈ 22 meV and Eg ≈ 40 meV). The prototype lateral spin‐channel Al/Cr2S3/Al devices exhibit a negative magnetoresistance of ≈25% and ≈15% at 100 K (below Néel temperature) for few‐layer (≈8 nm) and thin‐film (≈50 nm) device structures, respectively, owing to itinerant ferrimagnetism of Cr2S3. The magnetic field‐induced spin polaron formations are quite resilient and enhance the field‐dependent carrier conduction, making it greatly useful for negative magnetoresistance operation. These prototype Al/Cr2S3/Al structures have demonstrated a low power (≈2 µW for 8 µm channel at 10 µA current) operation with a negative field‐dependent resistance coefficient (rM) of ≈−5 × 10−4 Oe−1. The computed rM magnitude is tenfold higher than the bulk Cr2S3. This study identifies the potential of non‐vdW Cr2S3 toward new and robust 2D‐based spintronic applications.

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2D ferromagnetism in europium/graphene bilayers

Abstract: Coupling to Eu makes graphene magnetic without sacrificing its intrinsic properties.

Cited by 40 publications

References 57 publications

Recent Advances in 2D Rare Earth Materials

Recent Advances in 2D Rare Earth Materials

Ferromagnetic Elements in Two‐Dimensional Materials: 2D Magnets and Beyond

Probing Ferrimagnetic Semiconductor with Enhanced Negative Magnetoresistance: 2D Chromium Sulfide

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