2D Gallium Sulfide-Based 1D Photonic Crystal Biosensor for Glucose Concentration Detection

Abderrahmane, Abdelkader; Senouci, Khaled; Hachemi, B.; Ko, Pil Ju

doi:10.3390/ma16134621

Cited by 5 publications

(1 citation statement)

References 37 publications

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“…Fortunately, the successful fabrication of III-VI layer semiconductors has been achieved [47][48][49][50][51]. The predominant techniques used to acquire superior, purer materials include mechanical stripping [52][53][54], epitaxial growth [55][56][57][58], chemical vapor deposition (CVD) [59,60], and liquid phase stripping [61]. Earlier reports documented recent research endeavors on layered GaS and other transition metal chalcogenides [62,63].…”

Section: Introductionmentioning

confidence: 99%

Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices

Zhou,

Zhao,

et al. 2023

Crystals

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Here, we report on using chemical vapor deposition to generate three kinds of gallium sulfide nanosheets, with thicknesses of approximately 10, 40, and 170 nm. Next, we performed Raman imaging analysis on these nanosheets to evaluate their properties. The 10 nm GaS nanosheets exhibited a nearly equal distribution of Raman imaging intensity, whereas the 40 and 170 nm GaS nanosheets exhibited an inclination toward the edges with higher Raman intensity. When the polarization of the laser was changed, the intensity of Raman imaging of the 10 nm thick GaS nanosheets remained consistent when illuminated with a 532 nm laser. Notably, a greater Raman intensity was discernible at the edges of the 40 and 170 nm GaS nanosheets. Three distinct GaS nanosheet devices with different film thicknesses were fabricated, and their photocurrents were recorded. The devices were exposed to light of 455 nm wavelength. The GaS nanosheet devices with film thicknesses of 40 and 170 nm exhibited a positive photoresponse even though the photocurrents were fairly low. In contrast, the GaS nanosheet device with a film thickness of 10 nm had a considerable current without light, even though it had a weak reaction to light. This study reveals the different spatial patterns of Raman imaging with GaS thickness, the wavelength of excitation light, and polarization. Remarkably, the I-V diagram revealed a higher dark-field current of 800 nA in the device with a GaS nanosheet thickness of approximately 10 nm, when using a voltage of 1.5 V and a laser of 445 nm wavelength. These findings are comparable with those theretical pretictions in the existing literature. In conclusion, the observation above could serve as a catalyst for future exploration into photocatalysis, electrochemical hydrogen production through water splitting, energy storage, nonlinear optics, gas sensing, and ultraviolet selective photodetectors of GaS nanosheet-based photodetectors.

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