2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy

Kwak, Hoe-Min; Kim, Jongil; Lee, Je-Sung; Kim, Jeongwoon; Baik, Jaeyoung; Choi, Soo-Young; Shin, Sunwoo; Kim, Jin-Soo; Mun, Seung-Hyun; Kim, Kyung-Pil; Oh, Sang Ho; Lee, Dong-Seon

doi:10.1021/acsami.3c14076

ACS Appl. Mater. Interfaces

2023

DOI: 10.1021/acsami.3c14076

|View full text |Cite

2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy

Hoe-Min Kwak,

Jongil Kim,

Je-Sung Lee

et al.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2024

2025

Publication Types

Select...

Article5

Relationship

Self Cite0

Independent5

Authors

Journals

Cited by 6 publications

References 52 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing

Li,

Wang,

Liu

et al. 2025

Applied Surface Science

View full text Add to dashboard Cite

Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing

Li,

Wang,

Liu

et al. 2025

Applied Surface Science

View full text Add to dashboard Cite

Selective Area Growth of GaN μ-Platelets on Graphene

Henriques,

Tamsaout,

Largeau

et al. 2024

Crystal Growth & Design

View full text Add to dashboard Cite

We report the selective area growth of N-polar GaN μ-platelets on graphene by metal−organic vapor-phase epitaxy. In a first step, GaN nanowires grown by selective molecular beam epitaxy on patterned graphene arrays on SiO 2 are used as nucleation seeds. The initial radius of the graphene patches results in different optical and crystalline quality of the GaN μ-platelets due to different coalescence mechanisms. The use of large graphene patches (250 nm) with significant number of nanowire seeds promotes the growth selectivity on patterned graphene at the expense of the structural quality (presence of voids, stacking faults, dislocations, and inversion domains). On the contrary, the use of smaller patches (65 nm) allows to grow μ-platelets from a very limited seed number (<3 nanowires) with a significantly reduced number of extended defects. These observations have been directly related to optical measurements by cathodoluminescence and high-resolution transmission electronic microscopy observations performed on the same μ-platelets for the different graphene patch radii (65, 90, 250 nm). The formation of defects is discussed and supported by nucleation, intra-and intercoalescence mechanisms.

show abstract

Recent advances in III–V nitrides: properties, applications and perspectives

Li,

Zhu,

Guo

et al. 2024

J. Mater. Chem. C

View full text Add to dashboard Cite

show abstract

scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.

Contact Info

customersupport@researchsolutions.com

10624 S. Eastern Ave., Ste. A-614

Henderson, NV 89052, USA

This site is protected by reCAPTCHA and the Google Privacy Policy and Terms of Service apply.

Blog Terms and Conditions API Terms Privacy Policy Contact Cookie Preferences Do Not Sell or Share My Personal Information

Made with 💙 for researchers

Part of the Research Solutions Family.

2D-Material-Assisted GaN Growth on GaN Template by MOCVD and Its Exfoliation Strategy

Cited by 6 publications

References 52 publications

Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing

Efficient access to non-damaging GaN (0001) by inductively coupled plasma etching and chemical–mechanical polishing

Selective Area Growth of GaN μ-Platelets on Graphene

Recent advances in III–V nitrides: properties, applications and perspectives

Contact Info

Product

Resources

About