2D Materials Based Optoelectronic Memory: Convergence of Electronic Memory and Optical Sensor

Zhou, Feichi; Chen, Jiewei; Tao, Xiaoming; Wang, Xinran; Chai, Yang

doi:10.34133/2019/9490413

Cited by 111 publications

(118 citation statements)

References 71 publications

(77 reference statements)

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“…[1][2][3] Having direct bandgaps, these atomically thin materials are suitable for electronic and optoelectronic works, with their stacks into various heterostructures promising a wealth of engineered electronic and optoelectronic properties. [3][4][5][6][7][8] While single transistors and photodetectors built from 2D materials have already garnered significant research interest, [9][10][11][12] recent advances in large-area synthesis of TMD monolayers have opened up an exciting possibility to integrate a large number power budget of the otherwise enormously successful digital neural net paradigm. At the same time, various material systems, including organics and perovskites, have been employed to develop front-end in-memory image sensors, [30][31][32][33][34] so far integrating up to 100 pixels.…”

Section: Doi: 101002/adma202002431mentioning

confidence: 99%

An Atomically Thin Optoelectronic Machine Vision Processor

et al. 2020

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2D semiconductors, especially transition metal dichalcogenide (TMD) monolayers, are extensively studied for electronic and optoelectronic applications. Beyond intensive studies on single transistors and photodetectors, the recent advent of large‐area synthesis of these atomically thin layers has paved the way for 2D integrated circuits, such as digital logic circuits and image sensors, achieving an integration level of ≈100 devices thus far. Here, a decisive advance in 2D integrated circuits is reported, where the device integration scale is increased by tenfold and the functional complexity of 2D electronics is propelled to an unprecedented level. Concretely, an analog optoelectronic processor inspired by biological vision is developed, where 32 × 32 = 1024 MoS2 photosensitive field‐effect transistors manifesting persistent photoconductivity (PPC) effects are arranged in a crossbar array. This optoelectronic processor with PPC memory mimics two core functions of human vision: it captures and stores an optical image into electrical data, like the eye and optic nerve chain, and then recognizes this electrical form of the captured image, like the brain, by executing analog in‐memory neural net computing. In the highlight demonstration, the MoS2 FET crossbar array optically images 1000 handwritten digits and electrically recognizes these imaged data with 94% accuracy.

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Section: Doi: 101002/adma202002431mentioning

confidence: 99%

An Atomically Thin Optoelectronic Machine Vision Processor

et al. 2020

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“…This could be due to traps with a very long lifetime or permanent changes in the channel. While PPC is not very useful for photodetection, it can prove to be beneficial for non-volatile optical memory devices [45].…”

Section: Persistent Photocurrent (Ppc)mentioning

confidence: 99%

Optoelectronic and photonic devices based on transition metal dichalcogenides

Thakar

Lodha

2020

Mater. Res. Express

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Transition metal dichalcogenides (TMDCs) are a family of two-dimensional layered materials (2DLMs) with extraordinary optical properties. They present an attractive option for future multifunctional and high-performance optoelectronics. However, much remains to be done to realize a mature technology for commercial applications. In this review article, we describe the progress and scope of TMDC devices in optical and photonic applications. Various photoresponse mechanisms observed in such devices and a brief discussion on measurement and analysis methods are described. Three main types of optoelectronic devices, namely photodetectors, photovoltaics and lightemitting devices are discussed in detail with a focus on device architecture and operation. Examples showing experimental integration of 2DLM-based devices with silicon photonics are also discussed briefly. A wide range of data for key performance metrics is analysed with insights into future directions for device design, processing and characterization that can help overcome present gaps and challenges. While the field is still in its infancy and requires significant efforts toward standardizing various approaches towards a mature technology, it has already shown promising results in broader aspects of compatibility, integration and performance for future electronics. Sensors are increasingly becoming an integrated part of the global electronic eco-system with the rise of data-driven technologies. There is a growing need for networks of cost-effective, robust and reliable sensors and their integration with present technologies. Optoelectronic and photonic devices are of importance for both sensing as well as high-speed optical communication applications. 2DLMs demonstrate significant light-matter interaction that is tunable with external physical and electronic parameters such as pressure, strain, electric and magnetic field [1-6]. Moreover, 2DLMs show strong dependence of their band structure on thickness with a transition to direct bandgap in monolayers in most of the known 2DLMs [7][8][9]. Graphene has been the most studied material since its discovery in 2004 [10][11][12]. Apart from graphene, there are nearly 1500 possible 2DLMs with a wide range of material properties as predicted by first principle simulations [13]. Transition metal dichalcogenides (TMDCs) are a family of 2DLMs in the form of MX 2 compounds, where M is a transition metal (Mo, W, Re) and X is a chalcogen (S, Se, Te). TMDCs are promising for electronic applications due to their semiconducting behaviour as opposed to semi-metallic graphene, and better thermal stability than materials such as black phosphorus and silicene [14][15][16][17][18][19]. Optoelectronic devices based on TMDCsTMDCs have been the most studied 2DLMs, apart from graphene and black phosphorus, for electronic and optoelectronic device applications [20,21]. They have a sizeable bandgap in the visible and near infrared (NIR) range (∼1-2 eV) that is optimal for optoelectronic sensors and light-emitting sources for short-ran...

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“…Our findings suggest that molecular engineering of the seeding promoters may represent a viable tool in view of tailoring the physical properties of the MoS 2 monolayers for the development of nanoelectronic and photonic devices. [ 14–16 ]…”

Section: Introductionmentioning

confidence: 99%

Changing the Electronic Polarizability of Monolayer MoS₂ by Perylene‐Based Seeding Promoters

Martella¹,

Kozma²,

Tummala³

et al. 2020

Adv Materials Inter

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Large area molybdenum disulfide (MoS2) monolayers are typically obtained by using perylene‐3,4,9,10‐tetracarboxylic acid tetrapotassium salt (PTAS) as organic seeding promoter in chemical vapor deposition (CVD). However, the influence of the seeding promoter and the involvement of the functional groups attached to the seed molecules on the physical properties of the MoS2 monolayer are rarely taken into account. Here, it is shown that MoS2 monolayers exhibit remarkable differences in terms of the electronic polarizability by using two representative cases of seeding promoter, namely, the commercial PTAS and a home‐made perylene‐based molecule, N,N‐bis‐(5‐guanidil‐1‐pentanoic acid)‐perylene‐3,4,9,10‐tetracarboxylic acid diimide (PTARG). By thermogravimetric analysis, it is verified that the thermal degradation of the promoters occurs differently at the CVD working condition: with a single detachment of the functional groups for PTAS and with multiple thermal events for PTARG. As a consequence, the promoter‐dependent electronic polarizability, derived by free charges trapped in the monolayer, impacts on the photoluminescence emission, as well as on the electrical performances of the monolayer channel in back‐gated field‐effect transistors. These findings suggest that the modification of the electronic polarizability, by varying the molecular promoter in a pre‐growth stage, is a path to engineer the MoS2 opto‐electronic properties.

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2D Materials Based Optoelectronic Memory: Convergence of Electronic Memory and Optical Sensor

Cited by 111 publications

References 71 publications

An Atomically Thin Optoelectronic Machine Vision Processor

An Atomically Thin Optoelectronic Machine Vision Processor

Optoelectronic and photonic devices based on transition metal dichalcogenides

Changing the Electronic Polarizability of Monolayer MoS₂ by Perylene‐Based Seeding Promoters

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2D Materials Based Optoelectronic Memory: Convergence of Electronic Memory and Optical Sensor

Cited by 111 publications

References 71 publications

An Atomically Thin Optoelectronic Machine Vision Processor

An Atomically Thin Optoelectronic Machine Vision Processor

Optoelectronic and photonic devices based on transition metal dichalcogenides

Changing the Electronic Polarizability of Monolayer MoS2 by Perylene‐Based Seeding Promoters

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Changing the Electronic Polarizability of Monolayer MoS₂ by Perylene‐Based Seeding Promoters