“…Thus, it is urgent to find a new class of materials to overcome these technical problems. With the nature of ultrathin thickness, dangling-free bonds and tunable band structure, transition metal dichalcogenides (TMDCs) have shown excellent electrical properties, unique optoelectronic properties, and mechanical flexibility that could be transferred to arbitrary substrates, which are becoming one of the most promising materials to replace traditional silicon-based materials. − Thereinto, molybdenum disulfide (MoS 2 ) with a typical layered structure is widely studied. − According to current progress, MoS 2 possesses the thickness-dependent energy band to widen its absorption spectrum and the large surface-to-volume ratio to assist charge trapping, which lay a good foundation for the development of optoelectronic devices for sensors, − displays, − recognition, − and other diversified applications. − Furthermore, air-stabilized MoS 2 could overcome the phonon scattering through the interface engineering to obtain ultrahigh electrical properties at room temperature and achieve the large-size growth by the regulation of preparation process, which provide advantages for the development of large-scale miniaturized integrated circuits. , Markedly, MoS 2 -based flexible integrated logic circuits as the optimization of the growth process have been successfully studied, which obtained good device yield and excellent electrical performance with the mobility of 55 cm 2 V –1 s –1 , high on/off ratios of 10 10 , and current densities of 35 μA μm –1 …”