2D simulation of carbon transport at the growth of GaAS crystals by liquid encapsulated Czochralski techniques

Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1−xSix bulk crystals

“…For example, oxygen transport in the melt during Cz growth of Si crystals is profoundly studied [5][6][7]. There are works on carbon transport in the melt [8] during GaAs VCz growth, on gallium transport during vertical Bridgman growth of Ga-doped germanium [9] and etc. Kitashima et al [10] numerically analyzed the transport of raw material supplied onto the melt surface during a double-crucible Cz growth of lithium niobate with continuous charging.…”