2D Tellurium Films Based Self‐Drive Near Infrared Photodetector

Abstract

To reduce the amount of energy consumed in integrated circuits, high efficiency with the lowest energy is always expected. Self‐drive device is one of the options in the pursuit of low power nanodevices. It is a typical strategy to form an internal electric field by constructing a heterojunction in self‐drive semiconductor system. Here, a two‐step method is proposed to prepare high quality centimeter‐sized 2D tellurium (Te) thin film with hall mobility as high as 37.3 cm2V‐1s‐1, and the 2D Te film is further assembled with silicon to form a heterojunction for self‐drive photodetector, which can realize effective detection from visible to near infrared bands. The photodetectivity of the heterojunctions can reach 1.58 × 1011 Jones under the illumination of 400 nm@ 1.615 mW/cm2 and 2.08 x 108 Jones under the illumination of 1550 nm@ 1.511mW/cm2 without bias. Our experiments demonstrate the potential of 2D tellurium thin films for wide band and near infrared integrated device applications.