2D time-domain electromagnetic macroscopic numerical modelling on parallel computer: application to the mm-wave silicon DIMPATT diode

Moussati, Ali El; Dalle, C.

doi:10.1007/s10825-008-0235-1

Cited by 5 publications

(4 citation statements)

References 27 publications

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“…Note that this paper is exclusively devoted to a DTED oscillator designed and DC biased to operate under near optimum RF conditions at one THz. Indeed, a great variety of unexpected RF operating mode can be pointed out (smothered, parametric, chaotic …) depending on the oscillator DC and RF operating conditions as well as the DTED technological structure, particularly its length LDTED [10]. Their analysis present no interest in the present paper.…”

Section: Dted Oscillator Rf Operation Simulationmentioning

confidence: 93%

“…They were based on linear and non-linear, analytical and transmission line modeling. Two-dimensional (2D) time-domain numerical physical modeling, based on the coupled solution of the Maxwell and macroscopic drift-diffusion equations for the free carrier transport model, has been also developed [10]. All these models have allowed for investigating the potential of microwave DIMPATT.…”

Section: Introductionmentioning

confidence: 99%

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Electromagnetic physical modeling of a gallium nitride distributed transferred electron based planar waveguide structure THz oscillator

Dalle

2019

AEM

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The potential of a planar waveguide structure terahertz oscillator based on a gallium nitride distributed transferred electron device is theoretically investigated. The circuit numerical physical modeling relies on a two-dimensional time-domain electromagnetism/transport simulator. It is based on the coupled solution of the Maxwell and energy-momentum macroscopic transport equations. The study is focused on the analysis, from the space-time electromagnetic and electron transport quantities, of the complex CW operation of an oscillator, designed and DC biased, to optimally operate at one terahertz. The analysis is performed following a full electromagnetic approach in the time and frequency domain, at the local scale, for the description of the physical phenomena, as well as at the functional scale in order to obtain the quantities interesting the oscillator designer and user.

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Section: Dted Oscillator Rf Operation Simulationmentioning

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Electromagnetic physical modeling of a gallium nitride distributed transferred electron based planar waveguide structure THz oscillator

Dalle

2019

AEM

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“…The computer time necessary for the numerical solution of the Maxwell and drift-diffusion transport equations in the case, for exa~I:le, of the DIMPAIT diode is relatively important [3]. ThIS IS due, on the one hand, to the numerical stability criterions relating to the equation solution method leading naturally to the very low temporal increments (Llt = 10-17 s) and, on the other hand, to the structure of the millimeter wave diode itself.…”

Section: Resolution Algorithmsmentioning

confidence: 99%

Developpement of a time-domain physical electromagnetic simulator for microwaves circuits

Moussati¹,

Dalle

2009

2009 Mediterrannean Microwave Symposium (MMS)

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In this work we present a microwaves circuit electromagnetic simulator. It is fundamentally based on the 3D self-consistent numerical solution of the Maxwell's equations and the macroscopic conservation equations derived from the transport equation of Boltzmann. It can include linear electrical elements. As an illustration, it is applied to the simulation of a microstrip transmission line and the Distributed IMPact ionisation and Avalanche and Transit Time (DIMPATT) diode. II. ELECTROMAGNETIC MODELIGN OF ELECTRONIC CIRCUITSThe theoretical study of the operation of the microwave electronic circuits would ideally require the exact space-time solution of the Maxwell equations. This model is indeed capable of describing the interaction between electrical charges and the evolution of their distribution and motion at the origin of the electromagnetic field. The Maxwell equations are (1):In practice, when we consider the scale of dimensions of an electronic circuit, it is in general possible to split this circuit in sub-elements. The connection points between the different elements then constitute the nodes of the circuit. This feature makes this simplifying approach interesting is the fact that these elements may present a specific dynamic electrical behavior. Many of them present a linear behavior which does not require a physical description of their internal operation. They consequently can be described by means of a simple model. A. Physical model oftransportFor semiconductor device modeling, we use the threedimensional system of macroscopic conservation equations constituting the drift-diffusion model. Indeed, the stationary approach of the carrier transport is justified for DIMPATT diodes operating up to 100 GHz. The model is composed of the continuity equations for the electrons and holes and the equations determining the conduction current densities (2): B. Linear Lumped ComponentsIn the FDTD method, a lumped component is assumed to coincide with an E field component. Linear lumped components include elements such as short length of perfect conducting wire, resistor, capacitor, inductor and resistive voltage source. Associated with each lumped element is the I-V relation. A certain potential difference imposed across the lumped element will result in certain amount of current flowing ap --+ -= -div J + G -R at p (1) --+ aE--+ rotH = f>m-+ lc -+ ali rotE = -11-at

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“…In this context, we are presently developing a 2D/3D time-domain electromagnetic physical simulator including the free carrier transport phenomena description following the macroscopic approach. It has been originally devoted to the mm-wave distributed IMPATT diode modeling based on a drift-diffusion approach of the carrier transport [1]. It is now used to study the RF operation and potential performance of distributed THz GaN transferred electron devices by means of an energy-momentum type transport modeling.…”

Section: Introductionmentioning

confidence: 99%

2D Maxwell/transport time domain modeling of THz GaN distributed transferred electron device

Dalle¹,

Dessenne²,

Thobel³

2014

2014 International Workshop on Computational Electronics (IWCE)

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In order to investigate the distributed semiconductor device high frequency operation, we are developing a 2D/3D time-domain electromagnetic physical simulator. It is based on a self-consistent solution of both the Maxwell equations and the free carrier macroscopic conservation equation sets issued from the Boltzmann general transport equation. Its large potential application field presently concerns the GaN THz distributed Transferred Electron Device (TED).

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2D time-domain electromagnetic macroscopic numerical modelling on parallel computer: application to the mm-wave silicon DIMPATT diode

Cited by 5 publications

References 27 publications

Electromagnetic physical modeling of a gallium nitride distributed transferred electron based planar waveguide structure THz oscillator

Electromagnetic physical modeling of a gallium nitride distributed transferred electron based planar waveguide structure THz oscillator

Developpement of a time-domain physical electromagnetic simulator for microwaves circuits

2D Maxwell/transport time domain modeling of THz GaN distributed transferred electron device

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