2D TMD Channel Transistors with ZnO Nanowire Gate for Extended Nonvolatile Memory Applications

Abstract

Abstract2D transition metal dichalcogenides (TMDs) have been extensively studied due to their excellent physical properties. Mixed dimensional devices including 2D materials have also been studied, motivated by the possibility of any synergy effect from unique structures. However, only few such studies have been conducted. Here, semiconducting 1D ZnO nanowires are used as thin gate material to support 2D TMD field effect transistors (FETs) and 2D stack‐based interface trap nonvolatile memory. For the trap memory, deep level electron traps formed at the first MoS2/second MoS2 stack interface are exploited, since the first MoS2 is treated in an atomic layer deposition chamber for a short while. On the one hand, a complementary inverter type memory device can also be achieved using a long single ZnO wire as a common gate to simultaneously support both n‐ and p‐channel TMD FETs. In addition, it is found that the semiconducting ZnO nanowire itself operates as an n‐type channel when the TMD materials can become a top‐gate to charge the ZnO channel. It means that 2D (bottom gated) and 1D channel (top gated) FETs are respectively operational in a single device structure. The 1D–2D mixed devices seem deserving broad attention in both aspects of novelty and functionality.

Two-Dimensional MoS2: Structural Properties, Synthesis Methods, and Regulation Strategies toward Oxygen Reduction

“…More importantly, there are unsaturated coordination and dangling bonds at the edges of TMDs nanosheets. These special properties of TMDs nanosheets provide many inspirations for basic research in many fields including catalysis [28][29][30][31][32][33], transistor [34], energy storage [35][36][37][38][39] and sensor [40][41][42]. Among all 2D TMDs, MoS 2 is one of the few with a natural layered structure, indicating that MoS 2 can be stripped to obtain high-quality 2D MoS 2 without complicated chemical synthesis [26].…”

High performance and gate-controlled GeSe/HfS2 negative differential resistance device

“…The nano devices based on 2D-TMDs vdWHs have been efficiently used in FETs, 28 sensors, 29 data storage devices, 30 photodetectors, [31][32][33][34] integrated circuits, 35 energy storage, 36 ampliers, 37 inverters, 38 spin-eld effect transistors, 39 water splitting, 40 and diodes. 38,41 Heterostructures and homojunction type devices have been designed by the doping of TMDs materials (chemically and electrostatically), and Fermi-level pinning.…”

Quaternary NAND Logic and Complementary Ternary Inverter with p‐MoTe2/n‐MoS2 Heterostack Channel Transistors

“…Until recent years, 2D heterojunctions using transition metal dichalcogenides (TMDs) or other mono-elemental 2D semiconductors have been extensively studied, showing novel properties in respect of van der Waals (vdW) 2D junction interfaces. [1][2][3][4][5][6][7][8] Beyond PN junction diodes, other advanced device applications such as multivalue logic [9][10][11][12] and trap-induced memory [13][14][15][16][17] have also been attempted using general vdW heterojunctions. Among those applications, multivalue logic devices using 2D field-effect transistors (FETs) must be attractive in particular, casting a possibility of power reduction because conventional binary value Si-based 3D transistors nowadays face power density limit in ultralarge-scale integrated circuits.…”