Infrared, Millimeter-Wave, and Terahertz Technologies IX 2022
DOI: 10.1117/12.2644100
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2μm-compatible avalanche photodetector using Sb-based superlattice

Abstract: In this work, we report a separate absorption and multiplication avalanche photodiode (SAM-APD) with 100% cut-off wavelength of ~2.1 μm at 300 K grown by molecular beam epitaxy. The electron-dominated avalanche mechanism multiplication region was designed as a multi-quantum well structure consisting of AlAsSb/GaSb H-structure superlattice and Al0.3In0.7AsSb digital alloy. At room temperature, the device exhibits a maximum multiplication gain of 79 under -13.3 bias voltage.

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