3-dimensional microelectronic integration

Abstract

A variety of technologies have been applied to the formation of three-dimensional microstructures in the past two decades. In this talk I will describe work in my group to form three-dimensional structures using direct bonding and smart cut techniques. Direct bonding of semiconductor structures developed out early work of Wallis and Pomerantz, who introduced Anodic bonding in 1969[1, 21. This was followed by direct bonding introduced by two independent groups in the mid 1980's. Lasky et al. reported the bonding of silicon and silicon dioxide to silicon dioxide, and Shimbo et al. reported the silicon to silicon direct bonding in 1985 and 1986 respectively[3, 41. The Bower research group then introduced the concept of creating three-dimensional structures using aligned direct bonding [5, 61. Several new materials were added to expand direct bonding to Si3N4 and several silicides by this research group [7, 81. The Bower group then published papers and patents on applications on applications of aligned bonding with these materials to make simple three-dimensional structures [9, 10. 11, 121.