Abstract:Multilayered Ge nanodots have drawn much attention due to their potential applications in optoelectronics, such as photodetectors and lasers. Many groups studied multilayered Ge nanodots with Si spacers on Si(001) grown by Stranski-Krastanov (SK) growth mode and vertically aligned by local tensile strain induced by buried Ge nanodots (1-2). However, to avoid plastic relaxation caused by a 4.2% lattice mismatch between Si and Ge, thick nanodots and/or large layer numbers are challenging. Additionally, laterally… Show more
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