2022
DOI: 10.1149/ma2022-02321235mtgabs
|View full text |Cite
|
Sign up to set email alerts
|

3-Dimensional Self-Ordered Multilayered Ge Nanodots on SiGe

Abstract: Multilayered Ge nanodots have drawn much attention due to their potential applications in optoelectronics, such as photodetectors and lasers. Many groups studied multilayered Ge nanodots with Si spacers on Si(001) grown by Stranski-Krastanov (SK) growth mode and vertically aligned by local tensile strain induced by buried Ge nanodots (1-2). However, to avoid plastic relaxation caused by a 4.2% lattice mismatch between Si and Ge, thick nanodots and/or large layer numbers are challenging. Additionally, laterally… Show more

Help me understand this report

This publication either has no citations yet, or we are still processing them

Set email alert for when this publication receives citations?

See others like this or search for similar articles