2011 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2011) 2011
DOI: 10.1109/comcas.2011.6105887
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3 GS/s 7 GHz BW 12 Bit MuxDAC for direct microwave signal generation over L, S or C bands

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Cited by 6 publications
(4 citation statements)
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“…Table 1 compares a typical IQ modulator with the EV12DS130A, a microwave DAC with >6GHz output bandwidth from e2v [1]. Here we can see that the performance of the two devices is comparable and also that the power consumption of the DAC is slightly less than the IQ modulator.…”
Section: Figure 2 -Effect Of Aliasingmentioning
confidence: 75%
See 1 more Smart Citation
“…Table 1 compares a typical IQ modulator with the EV12DS130A, a microwave DAC with >6GHz output bandwidth from e2v [1]. Here we can see that the performance of the two devices is comparable and also that the power consumption of the DAC is slightly less than the IQ modulator.…”
Section: Figure 2 -Effect Of Aliasingmentioning
confidence: 75%
“…EV10AS180A: 10-bit1.5 GS/s ADC 1) Heavy Ions TestTwo samples were exposed at UCL for both SEL and SEU characterization. No SEL was observed at Tj max 125°C and voltage max for a LET of 80 MeV.cm²/mg with tilt and a LET of 67.7 MeV.cm²/mg without tilt.…”
mentioning
confidence: 99%
“…The EV12DS400 offers a number of different output waveform shaping modes, similar to those available on earlier devices [4], which enable flexibility of the device to operate with optimum performance in different Nyquist zones.…”
Section: B Output Waveform Shapingmentioning
confidence: 97%
“…Of course the CMOS section of available BiCMOS processes is generally very far from state of the art CMOS process (16nm), but a 130nm or a 90nm CMOS is more than enough for fast Data Converters design, together with a 160 GHz SiGeC HBT. This paper illustrates some major achievements in data conversion (ADCs and DACs) obtained thanks to 200GHz ft SiGeC (SiGe Carbon) fully Bipolar process [1], [2], [3], [4], and thanks to 120GHz fT SiGe BiCMOS 180nm process. In order to take advantage of both Bipolar and CMOS transistors, their performance with respect to transconductance, speed, matching, and noise are reviewed and compared in section VI.…”
Section: Introductionmentioning
confidence: 99%