3 ns single-shot read-out in a quantum dot-based memory structure

Nowozin, Tobias; Beckel, A.; Bimberg, D.; Lorke, Axel; Geller, M.

doi:10.1063/1.4864281

Cited by 13 publications

(5 citation statements)

References 22 publications

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“…Our method is not limited to slow relaxations. In related experiments on quantum dots, sampling rates higher than 300 MHz have been obtained 24 . The basic principal behind the demonstrated method is very versatile and we suggest to perform this characterization measurements on different dielectric materials in the future and also with different two-dimensional carrier gases.…”

Section: Discussionmentioning

confidence: 99%

Defect spectroscopy on the dielectric material aluminum oxide

Oing

Geller

Stahl

et al. 2020

Sci Rep

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A method for defect characterization is presented that allows to measure the activation energy, capture cross-section, and defect density in dielectric materials. This is exemplarily performed on aluminum oxide thin films deposited on hydrogen-terminated diamond. During the measurement, samples were illuminated using a 405 nm laser, charging the defects while simultaneously measuring the surface conductivity of the diamond at different temperatures. By applying the standard boxcar evaluation known from deep-level transient spectroscopy, we found five different defect levels in . One can be identified as substitutional silicon in aluminum oxide, while the others are most likely connected to either aluminum interstitials or carbon and nitrogen impurities.

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Section: Discussionmentioning

confidence: 99%

Defect spectroscopy on the dielectric material aluminum oxide

Oing

Geller

Stahl

et al. 2020

Sci Rep

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“…On the other hand, the 2DEG is a very sensitive detector for time‐resolved measurements of the electron tunneling, the density of states, and charge state of the dots. For comparison, this measurement technique has many similarities with the read‐out process in a flash memory, .…”

Section: Electrical Transconductance Spectroscopymentioning

confidence: 99%

“…They behave with their zero-dimensional density of states like "artificial atoms" and are perfectly suited for fundamental studies on atom-like quantum states [1][2][3] in a solidstate environment. In contrast to "real atoms," the solid-state matrix enables electrical contacting; a situation that makes QDs highly interesting for future device applications, like QD-lasers [4][5][6], amplifiers [7][8][9], photodetectors [10,11], or memories [12][13][14]. More visionary applications want to use QDs as building blocks in quantum information processing [15][16][17].…”

mentioning

confidence: 99%

Electron dynamics in transport and optical measurements of self‐assembled quantum dots

Kurzmann

Merkel

Marquardt

et al. 2017

Physica Status Solidi (b)

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The tunneling dynamics between self‐assembled quantum dots (QDs) and a charge reservoir can be measured in an all‐electrical or optical detection scheme. In all‐electrical transconductance spectroscopy, a two‐dimensional electron gas is used to probe the evolution of the many‐particle states inside an ensemble of QDs from non‐equilibrium to equilibrium. The optical detection scheme measures the tunneling dynamic into a single self‐assembled dot. The work done and results obtained using these different measurement techniques are reviewed and compared within this article. We will show that transconductance spectroscopy is sensitive to a time‐dependent density of states and enables preparation of non‐equilibrium charge and spin states for future applications in quantum information processing. The optical resonance fluorescence measurements on the electron dynamics demonstrates the influence of the exciton states on the charge‐carrier dynamics and enables a systematic study of the Auger recombination in self‐assembled dots.

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“…Limited studies have also examined the effect of the 2DEG on the optical properties of the SAQDs and shown that for barriers of 30 nm, ensemble emission spectra are largely unperturbed [50,51]. In addition, transport through the 2DEG has been used to detect charge occupation in the SAQD layer [52][53][54][55][56][57], and enable single photon detection by extension [58,59]. More recent investigations have started to explore the coupling between SAQDs and microcavity polaritons [60].…”

Section: Relation To Other Approaches In Quantum Coherent Semiconduct...mentioning

confidence: 99%

Optically Loaded Semiconductor Quantum Memory Register

et al. 2016

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We propose and analyze an optically loaded quantum memory exploiting capacitive coupling between self-assembled quantum dot molecules and electrically gated quantum dot molecules. The self-assembled dots are used for spin-photon entanglement, which is transferred to the gated dots for long-term storage or processing via a teleportation process heralded by single-photon detection. We illustrate a device architecture enabling this interaction and we outline its operation and fabrication. We provide self-consistent Poisson-Schroedinger simulations to establish the design viability and refine the design, and to estimate the physical coupling parameters and their sensitivities to dot placement. The device we propose generates heralded copies of an entangled state between a photonic qubit and a solid-state qubit with a rapid reset time upon failure. The resulting fast rate of entanglement generation is of high utility for heralded quantum networking scenarios involving lossy optical channels.Comment: 16 pages, 5 figure

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3 ns single-shot read-out in a quantum dot-based memory structure

Cited by 13 publications

References 22 publications

Defect spectroscopy on the dielectric material aluminum oxide

Defect spectroscopy on the dielectric material aluminum oxide

Electron dynamics in transport and optical measurements of self‐assembled quantum dots

Optically Loaded Semiconductor Quantum Memory Register

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