30 dBm P&lt;inf&gt;1dB&lt;/inf&gt; and 4 dB insertion losses optimized 4G antenna tuner fully integrated in a 130 nm CMOS SOI technology

Sonnerat, Florence; Pilard, Romain; Gianesello, F.; Jan, S.; Pennec, François Le; Person, C.; Durand, C.; Gloria, D.

doi:10.1109/rws.2013.6486645

2013 IEEE Radio and Wireless Symposium 2013

DOI: 10.1109/rws.2013.6486645

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30 dBm P<inf>1dB</inf> and 4 dB insertion losses optimized 4G antenna tuner fully integrated in a 130 nm CMOS SOI technology

Florence Sonnerat

Romain Pilard

F. Gianesello

et al.

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30 dBm P<inf>1dB</inf> and 4 dB insertion losses optimized 4G antenna tuner fully integrated in a 130 nm CMOS SOI technology

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