30 dBm P<inf>1db</inf> and 4 dB insertion losses optimized 4G antenna tuner fully integrated in a 130 nm CMOS SOI technology

Abstract

In order to counteract the antenna impedance mismatch due to its interaction with the environment, one solution is to add an antenna tuner between the front-end module and the antenna. In this paper, we present the large signal measurement of a 4G integrated antenna tuner, previously presented in [1]. The tuner has been realized in STMicroelectronics 130 nm CMOS SOI technology and operates between 2500 MHz and 2690 MHz. We also propose some improvement to reduce the design parasitics, illustrated by the small signal performances of the optimized circuit.Index Terms -Embedded antenna tuner, 4G-LTE applications, CMOS SOI technology, small signal measurement, large signal measurement

Experimental Investigation of Adaptive Impedance Matching for a MIMO Terminal With CMOS-SOI Tuners

“…For example, the RF-MEMS tuning module reported in [11] features 0.3 dB insertion loss at 850 MHz. In [12], an integrated matching network for high band operation (2.5-2.69 GHz) was designed in a 130 nm CMOSsilicon-on-insulator (CMOS-SOI) process. For antenna impedances with a voltage standing wave ratio (VSWR) of 5, the tuner was able to significantly reduce mismatch losses.…”