30 dBm single mode fiber-coupled semiconductor optical amplifier at 1550 nm

Campbel, Jenna; McClune, Kevin; Labrecque, Michelle; Talantov, Fedor; Garrett, Henry E.; Liu, Tom; Campero, Juan; Krambeck, Leticia; Morrison, Gordon; Johansson, Leif; Mashanovitch, Milan; LaChapelle, Joe; Eichenholz, Jason M.; Leisher, Paul O.

doi:10.23919/islc52947.2022.9943511

2022 28th International Semiconductor Laser Conference (ISLC) 2022

DOI: 10.23919/islc52947.2022.9943511

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30 dBm single mode fiber-coupled semiconductor optical amplifier at 1550 nm

Jenna Campbel

Kevin McClune

Michelle Labrecque

et al.

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2024

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Cited by 2 publications

References 6 publications

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Advancements in high brightness tapered diode laser amplifiers

Campbell,

Labrecque,

McClune

et al. 2024

High-Power Diode Laser Technology XXII

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High brightness semiconductor diode lasers can provide tremendous system-level advantages for many applications. Recent advancements in InP-based edge-emitting diode lasers operating in the 1500 -1600 nm wavelength band could enable compact, direct diode solutions with performance metrics that previously could only be met by fiber-based lasers or solid-state laser systems.We report on high power, high beam quality diode lasers at 1550 nm based on a tapered chip architecture. We have demonstrated >5 W of continuous wave output power at room temperature, with a slow axis beam propagation factor M 2 of 1.1, corresponding to a slow axis linear brightness of 9.2 W mm -1 mrad -1 [1, 2]. We have also demonstrated a fully packaged watt-class single mode fiber-coupled semiconductor optical amplifier (SOA) based on this technology. This package delivers >30 dBm (1.2 W) ex-fiber saturation output power [3], ten times higher saturation power than the prior state-of-the-art [4]. This result is achieved with an input seed power of 30 mW (~15 dBm), corresponding to an overall gain of ~16 dB. To demonstrate the functionality of the SOA, we have carried out linewidth measurements and data transmission measurements. These tapered lasers and amplifiers offer great potential benefit for many pumping and direct use applications.

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Advancements in high brightness tapered diode laser amplifiers

Campbell,

Labrecque,

McClune

et al. 2024

High-Power Diode Laser Technology XXII

Self Cite

View full text Add to dashboard Cite

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Robust high-power single-mode semiconductor optical amplifiers at 1550nm for free space optical communications

Labrecque,

Campbell,

Chu

et al. 2024

Laser Technology for Defense and Security XIX

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Watt-class semiconductor optical amplifiers (SOAs) at 1550 nm are an attractive alternative to replace erbium-doped fiber amplifiers (EDFAs) in various applications including free space optical communications (FSO), with the potential to be more efficient, compact, and cost-effective while providing high-power diffraction-limited output. We present a single mode fiber-coupled packaged SOA delivering >30 dBm (1.2 W) of continuous wave ex-fiber power at 1550 nm [1] with 16 dB of overall gain, enabled by recent advancements in diffraction-limited output from tapered semiconductor amplifiers. Preliminary data communications measurements are presented, with an open eye diagram achieved with > 1W of output power at 10 Gbps using the differential phase shift keying (DPSK) communications format. Watt-class collimated and fiber-coupled SOAs are available and being shipped to customers now.

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30 dBm single mode fiber-coupled semiconductor optical amplifier at 1550 nm

Cited by 2 publications

References 6 publications

Advancements in high brightness tapered diode laser amplifiers

Advancements in high brightness tapered diode laser amplifiers

Robust high-power single-mode semiconductor optical amplifiers at 1550nm for free space optical communications

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