30-W/mm GaN HEMTs by Field Plate Optimization

Wu, Yifeng; Saxler, A.; Moore, M.; Smith, R.P.; Sheppard, S.T.; Chavarkar, P.; Wisleder, T.; Mishra, Umesh K.; Parikh, P.

doi:10.1109/led.2003.822667

Cited by 994 publications

(406 citation statements)

References 9 publications

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“…Recently, this has been demonstrated once more for a GaInN laser diode with 100 W peak power, 1 while Wu et al 2 reported output powers for AlGaN/GaN high electron mobility transistors (HEMTs), which reached a density of 32.2 W mm À1 . In theory, even higher power outputs are possible.…”

Section: Introductionmentioning

confidence: 99%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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By an extensive investigation of the principal growth parameters on the deposition process, we realized the epitaxial growth of crystalline wurtzite GaN thin films on single crystal (001) diamond substrates by metal organic chemical vapor deposition. From the influence of pressure, V/III ratio, and temperature, it was deduced that the growth process is determined by the mass-transport of gallium precursor material toward the substrate. The highest temperature yielded an improved epitaxial relationship between grown layer and substrate. X ray diffraction (XRD) pole figure analysis established the presence of two domains of epitaxial layers, namely (0001) h10 10i GaN k (001) [110] diamond and (0001) h10 10i GaN k (001) ½1 10 diamond, which are 90 rotated with respect to each other. The presence of these domains is explained by the occurrence of areas of (2 Â 1) and (1 Â 2) surface reconstruction of the diamond substrate. When applying highly misoriented diamond substrates toward the [110] diamond direction, one of the growth domains is suppressed and highly epitaxial GaN on (001) diamond is realized.

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Section: Introductionmentioning

confidence: 99%

Realising epitaxial growth of GaN on (001) diamond

Dreumel

Tinnemans

Heuvel

et al. 2011

Journal of Applied Physics

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“…sapphire and SiC, of which silicon carbide (SiC) has the smallest lattice mismatch to GaN (∼3.8%). Moreover, the high thermal conductivity and the availability of conducting as well as semi-insulating substrates makes SiC attractive for the realization of both transistors [1] and optoelectronic devices [2]. To increase the efficiency of these devices, a great deal of effort is being invested in the growth of high quality epitaxial layers.…”

Section: Introductionmentioning

confidence: 99%

Defect formation in GaN grown on vicinal 4H‐SiC (0001) substrates

Rudziński¹,

Jezierska

Weyher

et al. 2007

Physica Status Solidi (a)

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We report a comparative study of wurtzite GaN epilayers prepared by Metal Organic Chemical Vapor Deposition on 4H-SiC substrates of orientation vicinal to the (0001) (misorientation 0°, 3.4°, and 8°). Structural analysis using X-ray diffraction, defect-selective etching methods, and (High Resolution-) Transmission Electron Microscopy provides direct evidence for a higher number of defects in GaN epilayers grown on the 8° misoriented substrate compared to the 3.4° and 0° misoriented substrates. We found strong differences in morphology of the GaN epilayers and in type and density of the defects formed during growth on both vicinal and nominally exact oriented SiC substrates. The formation of clusters of defects and the non-uniform distribution of strain, resulting in preferential cracking of the GaN films along the [1120] direction, are both results of growth on misoriented substrates. Based on experimental results, the growth mechanism is discussed and a model explaining the defect formation is proposed.

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“…Lastly, the third critical factor is the uniform distribution of electric field from source to drain electrodes [15,16]. Additional metal as a field-plate (FP) on the gate and drain-electrodes can uniformly terminate those electric field resulting in high V BR [4,17,18].…”

Section: Tgdfp Design and DC Characteristicsmentioning

confidence: 99%

Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

Khan

Park

2014

IEICE Electron. Express

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Abstract:In this paper, an effective T-gate with Drain-Field-Plate (TGDFP) technology is used in GaN-based HEMT for high breakdown voltage of 500 V and drain current of 540 mA/mm. Silvaco TCAD simulation showed that normally-off TGDFP HEMT with recessed gate length of 0.5 µm exhibited high threshold voltage up to +1 V and transconductance of 140 mS/mm along with frequency operation in Sband (∼3 GHz). The proposed lateral TGDFP HEMT provides desirable features for both Power and RF applications.

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30-W/mm GaN HEMTs by Field Plate Optimization

Cited by 994 publications

References 9 publications

Realising epitaxial growth of GaN on (001) diamond

Realising epitaxial growth of GaN on (001) diamond

Defect formation in GaN grown on vicinal 4H‐SiC (0001) substrates

Design of normally-off GaN-based T-gate with Drain-Field-Plate (TGDFP) HEMT for power and RF applications

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