300°C GaN/AlGaN Heterojunction Bipolar Transistor

Ren, F.; Abernathy, C. R.; Hove, J. M. Van; Chow, P. P.; Hickman, R.; Klaasen, J.J.; Kopf, R. F.; Cho, Hyun; Jung, K. B.; Wilson, R. G.; Han, Jung; Shul, R. J.; Baca, Albert G.; Pearton, S. J.

doi:10.1557/s1092578300001137

Cited by 74 publications

(17 citation statements)

References 13 publications

(6 reference statements)

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“…Recently, the University of Florida and UCSB groups reported on the first demonstration of an AlGaN/GaN HBT (MacCarthy, et al 1998;Han, et al 1999;Ren, et al 1998). There is also a proposal for a unipolar Induced Base Transistor that operates in a way similar to that of a bipolar device .…”

Section: Gan Bipolar Transistorsmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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Support is provided by a variety of U.S. government agencies, including ONR, DoC, and NSF.ITRI's mission is two-pronged: (1) to inform U.S. policymakers, strategic planners, and managers of the state of selected technologies in foreign countries in comparison to the United States; and (2) to identify opportunities for international cooperation among countries and collaboration among researchers. ITRI assessments cover basic research, advanced development, and applications. Panels of typically six technical experts conduct these assessments. Panelists are leading authorities in their fields, technically active, and knowledgeable about U.S. and foreign research programs. As part of the assessment process, panels visit and carry out extensive discussions with foreign scientists and engineers in their labs.The ITRI staff at Loyola College helps select topics, recruits expert panelists, arranges study visits to foreign laboratories, organizes workshop presentations, and finally, edits and disseminates the final reports. HIGH-TEMPERATURE ELECTRONICS IN EUROPE August 2000Vladimir Dmitriev (Chair) T. Paul Chow Steven P. DenBaars Michael S. Shur Michael G. Spencer George White This document was sponsored by the Office of Naval Research (ONR) and the National Science Foundation (NSF) under ONR Grant NOOO14-99-1-0529 and NSF Cooperative Agreement ENG-9707092, both awarded to the International Technology Research Institute at Loyola College in Maryland. The government has certain rights in this material. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the authors and do not necessarily reflect the views of the United States government, the authors' parent institutions, or Loyola College. ABSTRACTThis final report of ITRI's panel on high-temperature electronics in Europe consists of an executive summary, an introductory chapter, and six chapters by panel members on various aspects of wide bandgap electronics. The report also contains site reports for the various companies, labs, universities, and government offices that the panel visited in Europe. Comparisons are made between developments in Europe and the United States. Principal findings include: • European scientists and engineers see optoelectronics and high-power, high-frequency electronics as the major application opportunities for wide bandgap semiconductors.• The size of the GaN and SiC technology and device development effort in Europe is comparable with that in the United Statews.• Europe is ahead of the U.S. in in bulk GaN growth technology.• The United States is currently ahead in GaN-based device developments for light emitters, and high-power/high-frequency applications.• In silicon carbide technology, the U.S. is ahead in SiC bulk crystal and epitaxial production.• In R&D silicon carbide effort, European organization both academic and industrial have recently demonstrated outstanding results in both material growth (bulk and epi) and device development proving the leading position in the world; in the area ...

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Section: Gan Bipolar Transistorsmentioning

confidence: 99%

High-Temperature Electronics in Europe

Dmitriev¹,

Chow²,

DenBaars³

et al. 2000

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“…The first Npn-type AlGaN/GaN HBTs [1,2] were reported in 1998, and after that, several AlGaN/GaN [3,4], GaN/InGaN [5], and AlGaN/InGaN HBTs [6] were developed. However, two major issues have been low current gains and large offset voltages in the common-emitter current-voltage (I-V) characteristics [1][2][3][4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…However, two major issues have been low current gains and large offset voltages in the common-emitter current-voltage (I-V) characteristics [1][2][3][4][5][6]. The maximum current gain reported so far has been 35 [4], which is much lower than those reported for HBTs composed of other materials.…”

Section: Introductionmentioning

confidence: 99%

“…The maximum current gain reported so far has been 35 [4], which is much lower than those reported for HBTs composed of other materials. The offset voltage should be the difference in the bandgap energy between the emitter and base materials, and should therefore be less than 1 V. However, the reported offset voltages are 4 to 5 V [1][2][3][4][5][6]. To resolve these two issues, we used a low-resistivity p-InGaN instead of p-GaN as a base and applied the extrinsic base regrowth technique using p-InGaN.…”

Section: Introductionmentioning

confidence: 99%

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Growth of nitride semiconductors and its application to heterojunction bipolar transistors

Makimōto

Kumakura

2006

Electron Comm Jpn Pt II

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SUMMARYNitride heterojunction bipolar transistors (HBTs) are promising for high-power and high-temperature applications. However, two major issues for nitride HBTs have been low current gains and large offset voltages. Recently, to resolve these two issues, we developed a technique for extrinsic base regrowth of p-InGaN which led to the successful fabrication of Npn-type GaN/InGaN HBTs with high current gains and low offset voltages. These GaN/InGaN HBTs have a low-resistivity p-InGaN base and widebandgap n-GaN collector. We demonstrated their high breakdown voltage characteristics as well as high current density characteristics. These characteristics indicate that GaN/InGaN HBTs are favorable for high-power electronic devices.

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“…There is a strong interest in the research and development of GaN-based HBTs in recent years. Some groups have demonstrated the feasibility of this device and have achieved some impressive results [1][2][3], but there are many limitations in the growth and fabrication of GaN-based HBTs. In a vertical device structure like a HBT, accurately doping control is a important factor to get good device properties, because the doping concentration in each layer has a great effect on the device properties such as current gain, cutoff frequency and breakdown voltage.…”

Section: Introductionmentioning

confidence: 99%

The difference of Si doping efficiency in GaN and AlGaN in GaN‐based HBT structure

Ran

Wang

et al. 2006

Phys. Status Solidi (c)

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An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH 4 ) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy.

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300°C GaN/AlGaN Heterojunction Bipolar Transistor

Cited by 74 publications

References 13 publications

High-Temperature Electronics in Europe

High-Temperature Electronics in Europe

Growth of nitride semiconductors and its application to heterojunction bipolar transistors

The difference of Si doping efficiency in GaN and AlGaN in GaN‐based HBT structure

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