300°C Silicon Carbide Integrated Circuits

Abstract

MOSFET-based integrated circuits were fabricated on silicon carbide (SiC) substrates. SiC devices can operate at much higher temperatures than current semiconductor devices. Simple circuit components including operational amplifiers and common source amplifiers were fabricated and tested at room temperature and at 300°C. The common source amplifier displayed gain of 7.6 at room temperature and 6.8 at 300°C. The operational amplifier was tested for small signal open loop gain at 1kHz, measuring 60 dB at room temperature and 57 dB at 300°C. Stability testing was also performed at 300°C, showing very little drift at over 100 hours for the individual MOSFETs and the common source amplifier.

Reliability of Silicon Carbide Integrated Circuits at 300°C

“…Finally, Ti/Au was deposited as bond pad contacts and interconnects metal. Fabrication and design of integrated circuits was similar to previously reported [2].…”

“…Functional silicon carbide (SiC) analog and digital integrated circuits have been previously reported [1][2][3] and operation of 6H-SiC JFET components for more than a thousand hours was demonstrated [4]. The n-channel MOS approach utilizing depletion-and enhancement-mode MOSFET devices has been selected to develop integrated circuits.…”

Integrated Digital and Analog Circuit Blocks in a Scalable Silicon Carbide CMOS Technology

“…However, the HiTSiC technology was discontinued in 2018. Other inhouse SiC CMOS technologies are reported by General Electric Global Research Center in the United States of America, for example [24], [25]. But in strong contrast with silicon services like Europractice, accessible SiC CMOS fabrication technologies are scarce to nonexistent.…”

300C Capable Digital Integrated Circuits in SiC Technology

“…These industries include oil and gas exploration, geothermal energy, aviation and automotive. Circuits of the complexity of logic gates, 11-stage ring oscillator, and amplifier are demonstrated in [ [1]] -[ [4]]. In this paper; sequential circuits such as data latch, flip flops (data and toggle) as well as 4-bit shift register and counter built in n-channel, enhancement-mode Silicon Carbide (SiC) MOS technology will be presented.…”