300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers

Hamada, Hiroshi; Tsutsumi, Takuya; Matsuzaki, Hiroyuki; Fujimura, Takuya; Abdo, Ibrahim; Shirane, Atsushi; Okada, Kei; Itami, Go; Song, Ho-Jin; Sugiyama, Hiroki; Nosaka, Hideyuki

doi:10.1109/jssc.2020.3005818

Cited by 132 publications

(53 citation statements)

References 37 publications

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“…In order to limit the scope, we will focus on truly broadband approaches, with a bandwidth of 100 GHz and more, such as required for next-generation high-data-rate fiber-based optical communications, for instance. Further emerging applications involving electronic chips with wideband performance are edge computing, imaging sensors [7], mm-wave point-topoint radio links [8]- [10], and mm-wave radar [11].…”

Section: Introductionmentioning

confidence: 99%

Connecting Chips With More Than 100 GHz Bandwidth

et al. 2021

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Section: Introductionmentioning

confidence: 99%

Connecting Chips With More Than 100 GHz Bandwidth

et al. 2021

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“…To meet the bandwidth, power, and gain demands of highspeed wireless communication systems [1], [2], new semiconductor technologies that can operate at frequencies exceeding 300 GHz, while delivering output power on the order of a Watt within a compact form-factor are highly sought after [3]. High electron mobility transistors (HEMTs) made from InP are capable of reaching frequencies higher than 300 GHz but are limited to less than 10 mW of output power [4], [5].…”

Section: Introductionmentioning

confidence: 99%

Design and Simulation of Near-Terahertz GaN Photoconductive Switches--Operation in the Negative Differential Mobility Regime and Pulse Compression

Rakheja¹,

Li²,

Dowling³

et al. 2021

Preprint

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<div> <div> <div> <p>The wide bandgap material, Gallium Nitride (GaN), has emerged as the dominant semiconductor material to implement high-electron mobility transistors (HEMTs) that form the basis of RF electronics. GaN is also an excellent material to realize photoconductive switches (PCSS) whose high-frequency performance could exceed that of RF HEMTs. In this paper, we numerically model the output characteristics of a GaN PCSS as a function of the input electrical and optical bias and the device dimensions. Importantly, we show that operating the GaN PCSS in the regime of negative differential mobility significantly benefits its high-frequency performance by compressing the temporal width of the output current pulse, while also enhancing its peak value. We find that when the optically excited carriers are generated in the middle of the active region, the bandwidth of the device is approximately 600 GHz, while delivering an output power exceeding 800 mW with a power gain greater than 35 dB. The output power increases to 1.5 W, and the power gain exceeds 40 dB with a near-terahertz bandwidth ( ≈ 800 GHz), as the laser source is moved closer to the anode. Finally, we elucidate that under high optical bias with significant electrostatic screening effects, the DC electric field across the device can be boosted to further enhance the performance of the GaN PCSS. </p> </div> </div> </div>

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“…On the other hand, with the improvement of device performance in recent years, the second method which uses a small bandwidth with high spectral efficiency has been the focus of research for many groups [15][16][17][18][19][20][21]. In [16], a 300-GHz transceiver based on 80-nm InP HEMT technology is developed to achieve 100 Gpbs wireless data transmission using 16QAM over 2.22m with 50-dBi antennas.…”

Section: Introductionmentioning

confidence: 99%

“…I. Dan, et al use a broadband 300 GHz wireless link to achieve 56 Gbps for transmission distance of 10 m with 16QAM [20]. In [21], a high-performance 300-GHz wireless link is developed based on InP-HEMT technology by NTT Device Technology Laboratories. The proposed TRX enables the data transmission of a 120-Gbps 16-QAM signal over a distance of 9.8 m. These successful transmissions of the high-rate data are partly to their highperformance transmitters and receivers, and partly to the fast-digital processing equipment.…”

Section: Introductionmentioning

confidence: 99%

A 20.8-Gbps dual-carrier wireless communication link in 220-GHz band

et al. 2021

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With the successful demonstration of terahertz (THz) high-speed wireless data transmission, the THz frequencies are now becoming a worth candidate for post-5G wireless communications. On the other hand, to bring THz communications a step closer to real scenario application, solving high data rate realtime transmission is also an important issue. This paper describes a 220-GHz solid-state dual-carrier wireless link whose maximum transmission real-time data rates are 20.8 Gbps (10.4 Gbps per channel). By aggregating two carrier signals in the THz band, the contradiction between high real-time data rate communication and low sampling rate analog-to-digital (ADC) and digital-to-analog converter (DAC) is alleviated. The transmitting and receiving front-ends consist of 220-GHz diplexers, 220-GHz sub-harmonic mixers based on anti-parallel Schottky barrier diodes, G-band low-noise amplifiers (LNA), WR-4.3 band high-gain Cassegrain antennas, high data rates dual-DAC and -ADC baseband platform and other components. The low-density parity-check (LDPC) encoding is also realized to improve the bit error rate (BER) of the received signal. Modulated signals are centered at 214.4 GHz and 220.6 GHz with -11.9 dBm and -13.4 dBm output power for channel 1 and 2, respectively. This

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300-GHz-Band 120-Gb/s Wireless Front-End Based on InP-HEMT PAs and Mixers

Cited by 132 publications

References 37 publications

Connecting Chips With More Than 100 GHz Bandwidth

Connecting Chips With More Than 100 GHz Bandwidth

Design and Simulation of Near-Terahertz GaN Photoconductive Switches--Operation in the Negative Differential Mobility Regime and Pulse Compression

A 20.8-Gbps dual-carrier wireless communication link in 220-GHz band

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