300-mm Monolithic Silicon Photonics Foundry Technology

Giewont, Ken; Nummy, Karen; Anderson, Frederick A.; Ayala, Javier; Barwicz, Tymon; Bian, Yusheng; Dezfulian, Kevin; Gill, Douglas M.; Houghton, Thomas; Hu, Shuren; Peng, Bo; Rakowski, Michal; Rauch, S.E.; Rosenberg, J.J.; Şahin, Asli; Stobert, Ian; Stricker, Andy

doi:10.1109/jstqe.2019.2908790

Cited by 209 publications

(91 citation statements)

References 17 publications

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“…The device Si can act as a waveguiding core as it has larger refractive index than its surrounding silicon dioxide (SiO 2 ) or silicon nitride (SiN) materials. The material platform, most notably specified by the thickness of the device silicon, has gradually come to a consensus of around 220 nm [17][18][19][20][21] though some variations exist for better integration with transistors [22] or for more tolerable optical performance [23,24]. SiN, commonly found in many CMOS processes, can also act as a waveguiding material in Si photonics.…”

Section: Waveguiding Materialsmentioning

confidence: 99%

Si Photonics for Practical LiDAR Solutions

et al. 2019

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In the article the authors discuss light detection and ranging (LiDAR) for automotive applications and the potential roles Si photonics can play in practice. The authors review published research work on Si photonics optical phased array (OPA) and other relevant devices in the past decade with in-depth technical analysis with respect to practical system design considerations. The commercialization status of certain LiDAR technologies is briefly introduced.

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Section: Waveguiding Materialsmentioning

confidence: 99%

Si Photonics for Practical LiDAR Solutions

et al. 2019

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“…The black and red data points and axis represent the static modulation efficiency as a function of the f 3dB bandwidth and the dynamic modulation efficiency (extracted from eye-diagrams) as a function of the modulation speed, respectively. The red, blue and green data clouds enclose single- 11,12,34,38 and double-layer [8][9][10]35 graphene and silicon- [39][40][41] state-of-the-art modulators operating at λ = 1.55 µm. Refer to sections XV and XVI in SI for a more detailed comparison of graphene-based modulators.…”

Section: Resultsmentioning

confidence: 99%

2D-3D integration of hBN and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

Agarwal¹,

Terrés²,

Orsini³

et al. 2020

Preprint

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Electro-absorption (EA) waveguide-coupled modulators are essential building blocks for on-chip optical communications. Compared to state-of-the-art silicon (Si) devices, graphene based EA modulators promise smaller footprints, larger temperature stability, cost-effective integration and high speeds. However, combining high speed and large modulation efficiencies in a single graphene-based device has remained elusive so far. In this work, we overcome this fundamental trade-off by demonstrating the first 2D-3D dielectric integration in a high-quality encapsulated graphene device. We integrated hafnium oxide (HfO2) and two-dimensional hexagonal boron nitride (hBN) within the insulating section of a double-layer (DL) graphene EA modulator. This novel combination of materials allows for a high-quality modulator device with record high performances: a ∼39GHz bandwidth (BW) with a three-fold increase in modulation efficiency compared to previously reported high speed modulators. This first demonstration of 2D-3D integration paves the way to a plethora of electronic and opto-electronic devices with enhanced performance and stability, while expanding the freedom for new device designs.

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“…A third tradeoff is an additional area on the chip required for the bond pads needed to connect to the four PDs. This can be mitigated by implementing the receiver in a monolithic process, such as the one offered by GlobalFoundries, Santa Clara, CA, USA [21], where bond pads are not needed, similar to the work presented in [5]. The reported area of PDs in SiP is 25 μm × 8 μm in [22], which is negligible in this case.…”

Section: Comparison With the State-of-the-artmentioning

confidence: 99%

A 22-Gb/s Time-Interleaved Low-Power Optical Receiver With a Two-Bit Integrating Front End

Radi

Nezami

Taherzadeh-Sani

et al. 2021

IEEE J. Solid-State Circuits

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This article presents the implementation of a novel 22-Gb/s energy-efficient optoelectronic receiver architecture in 65-nm CMOS for short-reach optical communication. The receiver incorporates four sub receivers with a two-bit integrating resettable front-end in each sub receiver. The inputs to two of the four sub receivers are optically delayed by one bit and two complementary quarter-rate clock phases are used to completely recover the data. The two-bit integrating low-bandwidth front end replaces the full-bandwidth transimpedance amplifier used in conventional optoelectronic receivers, resulting in improved energy efficiency. The low-bandwidth operation is enabled by using a capacitor at the input and by amplifying the two-bit integrated voltage with low-bandwidth voltage gain stages that require a bandwidth of only 35% of the operating data rate. The receiver performs a 1:4 demultiplexing operation by only using two quarter-rate clock phases instead of the four phases that are conventionally used in a quarter-rate clocking system. This clocking scheme reduces complexity while maintaining the same timing margin of the quarter-rate systems. This two-clock phase system is enabled by optical delay lines and splitters. The receiver is experimentally validated with a 1550-nm photodetector array wire bonded to the four inputs. The electronic part of the receiver achieves error-free transmission (BER < 10 −12) at 22 Gb/s with an energy efficiency of 1.43 pJ/bit and an average sensitivity of −7.8 dBm (or −6.2 dBm optically modulated amplitude) with a 1.09-V supply.

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300-mm Monolithic Silicon Photonics Foundry Technology

Cited by 209 publications

References 17 publications

Si Photonics for Practical LiDAR Solutions

Si Photonics for Practical LiDAR Solutions

2D-3D integration of hBN and a high-κ dielectric for ultrafast graphene-based electro-absorption modulators

A 22-Gb/s Time-Interleaved Low-Power Optical Receiver With a Two-Bit Integrating Front End

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