1999
DOI: 10.1889/1.1834130
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32,2: The development of the new low resistive material bus‐line process with super high aperture ratio for high resolution TFT‐LCDs

Abstract: The TFT‐alley process for high resolution and large screen size TFT‐LCD such as 20UXGA (1600×1200) is developed without the need for extra processing steps. A demonstrated novel process uses Pure‐Al metal as gate and source electrode with low dielectric interlayer, which can result in achieving high performance a‐Si TFT with high yield. 18.1SXGA(1280×1024) panel was already introduced in the mass production and achieved high cost performance with high aperture ratio.

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Cited by 5 publications
(1 citation statement)
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“…Also, the inclination of the liquid crystal molecules around the periphery of the pixel electrode reduces the aperture ratio further [4]. The pixel design to achieve a high aperture ratio in transmissive TFT-LCD's therefore requires the pixel electrode to be extended over the gate and data signal lines, as shown in the top view of Figure 1(b) [6,9]. The passivation layer, located between the pixel electrode and the data electrode, must then provide sufficiently low dielectric constant (k), large vertical displacement and high transmittance in the visible light range.…”
Section: Introductionmentioning
confidence: 99%
“…Also, the inclination of the liquid crystal molecules around the periphery of the pixel electrode reduces the aperture ratio further [4]. The pixel design to achieve a high aperture ratio in transmissive TFT-LCD's therefore requires the pixel electrode to be extended over the gate and data signal lines, as shown in the top view of Figure 1(b) [6,9]. The passivation layer, located between the pixel electrode and the data electrode, must then provide sufficiently low dielectric constant (k), large vertical displacement and high transmittance in the visible light range.…”
Section: Introductionmentioning
confidence: 99%