32GHz resonant-fin transistors in 14nm FinFET technology

Bahr, Bichoy; He, Yanbo; Krivokapić, Zoran; Banna, Srinivasa; Weinstein, Dana

doi:10.1109/isscc.2018.8310327

Cited by 20 publications

(27 citation statements)

References 3 publications

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“…2), every fin is connected, which is typically forbidden by the layout design rule constraints, which are imposed by the foundries. Assuming a larger unit cell of 14 fins and a design rule compliant connection scheme, the effective coupling drops to 0.2%, which is more reasonable at such frequencies [18], [30]. Nevertheless, the model is able to describe a wide range of coupling coefficients, which solely depend on the modeled device.…”

Section: A Finfet Mems Working Principlementioning

confidence: 98%

“…The working principle of the RFT is based on MOS capacitor actuation, which couples to a mechanical eigenmode inside a FinFET gate with hundreds of adjacent fins [18]. The mechanical eigenmode inside the common gate is sensed at a differentially wired transistor pair.…”

Section: A Finfet Mems Working Principlementioning

confidence: 99%

“…Moreover, for best functionality, i.e., the largest current modulation at the output, the pressure in the channel needs to be as large as possible. To reach the large Q-factor reported in [18], an acoustic Bragg mirror is required in the back-end-of-line (BEOL). Mechanical losses of the cavity can be reduced if the resonant frequency lies within any acoustic bandgap of the BEOL mirror [19], [20].…”

Section: A Finfet Mems Working Principlementioning

confidence: 99%

“…The fins and gate are biased at V drive = 40 mV and V G = 800 mV, respectively. Both fins are driven with a sinusoidal amplitude of v drive = 30 mV and a phase difference of φ drive = 180 • in-between them [18]. The absolute pressure variation, derived from the integrated Cauchy stress tensor inside one of the FinFET channels, with regard to the actuation frequency is depicted in Fig.…”

Section: A Finfet Mems Working Principlementioning

confidence: 99%

“…Recent research activities like [18] have shown a possibility to implement MEMS resonators fully embedded in standard CMOS FinFET processes with promising results in frequency and Q-factor. The presented resonant fin transistor (RFT) utilizes the geometric properties of a standard CMOS FinFET process to drive and sense acoustic vibrations in the solid CMOS front-end-of-line (FEOL) in an electric fashion without the need for additional postprocessing or special packaging.…”

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confidence: 99%

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Modeling and Analysis of High-Q Resonant-Fin Transistors

Hager

Hudeczek

Baumgartner

et al. 2021

IEEE Trans. Electron Devices

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This article presents a method for modeling high-Q resonant-fin transistors with focus on circuit design simulations. The model is implemented for simulations in a SPICE-like design environment and is based on two basic properties of the resonator device: the mechanical spectral behavior and the electro-mechanical-transfer function. The spectral model operates in the mechanical pressure regime, while the mobility model converts this pressure into a mobility change inside the channel of the transistor and is hence, generating an ac current at the output of the device. The model also includes the electrical transistor characteristic for the input and the output of the resonator. This enables accurate and fast circuit simulations with a standard SPICE simulator, e.g., for the design of frequency synthesizer circuits. The model is validated against finite element method (FEM) simulations at an artificially damped quality factor of Q = 500. Also, simulation results for a quality factor of Q = 50 000 are shown, to prove the full functionality of the electrical model. Index Terms-Circuit simulation, electrical model, FinFET, finite element analysis, high Q-factor, modified Butterworth-Van Dyke (MBVD), resonant-fin transistor (RFT), resonator. I. INTRODUCTIONT HE introduction of advanced communication standards such as long term evolution (LTE) and 5G New Radio drives the development of smaller and more compact devices. Additionally maintaining and improving power consumption Manuscript

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Section: A Finfet Mems Working Principlementioning

confidence: 98%

Section: A Finfet Mems Working Principlementioning

confidence: 99%

Section: A Finfet Mems Working Principlementioning

confidence: 99%

Section: A Finfet Mems Working Principlementioning

confidence: 99%

mentioning

confidence: 99%

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Modeling and Analysis of High-Q Resonant-Fin Transistors

Hager

Hudeczek

Baumgartner

et al. 2021

IEEE Trans. Electron Devices

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Perspectives of using spin waves for computing and signal processing

2017

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It is an intriguing concept to use oscillators as fundamental building blocks of electronic computers. The idea is not new, but is currently subject to intense research as a part of the quest for 'beyond Moore' electronic devices. In this paper we give an engineering-minded survey of oscillator-based computing architectures, with the goal of understanding their promise and limitations for next-generation computing. We will mostly discuss non-Boolean, neurally-inspired computing concepts and put the emphasis on hardware and on circuits where the oscillators are realized from emerging, nanoscale building blocks. Despite all the promise that oscillatory computing holds, existing literature gives very few clear-cut arguments about the possible benefits of using oscillators in place of other analog nonlinear circuit elements. In this survey we will argue for finding the rationale of using oscillatory building blocks and call for benchmarking studies that compare oscillatory computing circuits to level-based (analog) implementations.

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Acoustic resonators with a commercial ring

2022

Nat Electron

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32GHz resonant-fin transistors in 14nm FinFET technology

Cited by 20 publications

References 3 publications

Modeling and Analysis of High-Q Resonant-Fin Transistors

Modeling and Analysis of High-Q Resonant-Fin Transistors

Perspectives of using spin waves for computing and signal processing

Acoustic resonators with a commercial ring

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