33.4 A 28nm 2Mb STT-MRAM Computing-in-Memory Macro with a Refined Bit-Cell and 22.4 - 41.5TOPS/W for AI Inference

Cai, Hao; Bian, Zhongjian; Hou, Yaoru; Zhou, Yongliang; Cui, Jia-le; Guo, Yanan; Tian, Xiaoyun; Liu, Bo; Guo, An; Wang, Zhen; Yang, Jun; Shan, Weiwei

doi:10.1109/isscc42615.2023.10067339

Cited by 29 publications

(1 citation statement)

References 6 publications

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“…Although the SIMPLY logic was originally proposed and validated for Resistive Random Access Memory (RRAM) devices [10], [11], [12], [13], recent investigations have extended its applicability to Spin-transfer Torque Magnetic Random-Access Memory (STT-MRAM) devices [14], [15]. The latter represents an appealing option for LIM applications owing to faster read/write operations, low standby power consumption, and high endurance [16], [17], [18], [19], [20], [21], [22], [23]. Spinorbit torque (SOT) MRAM technology has also been considered as a potential alternative for the development of Compute-in-Memory (CIM) architectures [24], [25], [26].…”

Section: Introductionmentioning

confidence: 99%

SIMPLY+: A Reliable STT-MRAM-Based Smart Material Implication Architecture for In-Memory Computing

Moposita,

Garzón,

De Rose

et al. 2023

IEEE Access

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This paper introduces SIMPLY+, an advanced Spin-Transfer Torque Magnetic Random-Access Memory (STT-MRAM)-based Logic-in-Memory (LIM) architecture that evolves from the previously proposed smart material implication (SIMPLY) logic scheme. More specifically, the latter is enhanced by incorporating additional circuitry to enhance the reliability of preliminary read operations. In this study, the proposed architecture is benchmarked against its conventional counterpart. Obtained results show a significant improvement in terms of reliability, i.e., the nominal read margin (RM) by a factor of ∼3-4× and accordingly the bit error rate (BER) by more than four orders of magnitude. These improvements come at minimal cost in terms of circuit area and complexity compared to the conventional SIMPLY design. Overall, this research establishes SIMPLY+ as a promising solution for the design of reliable and energy-efficient in-memory computing architectures.

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