33-µm microcavity light emitter for gas detection

Hadji, E.; Picard, E.; Roux, Clément; Molva, E.; Ferret, P.

doi:10.1364/ol.25.000725

Cited by 14 publications

(7 citation statements)

References 13 publications

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“…[38,39] These have been applied to deal with several problems, e.g. light-emitting diodes grown by metal organic chemical vapor deposition, [40] light emitters for gas detection, [41] vertical-cavity surface-emitting devices, [42] quantum dots in single-mirror light-emitting diodes, [43] in situ modification of the decay rate of a single quantum emitter placed in front of a moveable mirror, [44] photonic crystal-assisted light extraction from a colloidal quantum dot/GaN hybrid structure, [45] white organic light-emitting devices, [46] and polariton photoluminescence from inside a microcavity. [47] Avoiding the mere description of the method, we discuss here its application for our purposes.…”

Section: Cars Microscopy In Microcavity: Methods Of Source Termsmentioning

confidence: 99%

Coherent anti‐Stokes Raman scattering microscopy within a microcavity with parallel mirrors

Marrocco¹,

Nichelatti²

2009

J Raman Spectroscopy

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Coherent anti-Stokes Raman scattering (CARS) microscopy, or micro-CARS, is becoming more and more popular to identify chemical species with notable three-dimensional resolution. In view of this important application, the present work tries to extend the analysis of cavity effects that are well known in other branches of linear and nonlinear optics. In particular, the CARS process taking place within a Fabry-Pérot microcavity (with mirror spacing on the order of the anti-Stokes wavelength) is here examined. Two theoretical cavity models are used and found interchangeable as to the description of the typical phenomenology of enhancement and inhibition expected for the electromagnetic confinement induced by the boundary conditions. These phenomena are responsible of strong alterations in the spatial distribution of micro-CARS, and instructive examples are shown for spherical Raman scatterers of different sizes. To sum them up, the signal enhancement occurs in correspondence of pronounced narrowing and elongation of the emission lobes surrounding the optical axis (coincident with the propagation direction of the collinear laser beams). Conversely, the inhibition is characterized by the ejection of radiation at large angles (with respect to the optical axis) for those wavelengths that do not respect the cavity tuning adjusted on the given anti-Stokes wavelength. The different angular properties of spectrally separated components of CARS signals are then proven useful for the amplification of the contrast defining the quality of CARS imaging. In the end, amplifications of one or two orders of magnitude are calculated depending on different experimental conditions. Limits and future developments of the present approach are discussed in the conclusions.

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Section: Cars Microscopy In Microcavity: Methods Of Source Termsmentioning

confidence: 99%

Coherent anti‐Stokes Raman scattering microscopy within a microcavity with parallel mirrors

Marrocco¹,

Nichelatti²

2009

J Raman Spectroscopy

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“…1,2 We adapted two RIBER 32 MBE machines in order to control the epitaxy of mercury-based materials: one is dedicated to the heteroepitaxy of CdTe and HgCdTe on up to 3 inches germanium substrates for MWIR FPA's detectors 6,9 and the second one is dedicated to HgCdTe epitaxy on CdZnTe substrates for MWIR, LWIR and multispectral detection, as well as for IR emission. 6,10 The growth is done on (211)B oriented substrates. Surface preparation using the classical bromine etch solution has to be particularly effective and reproducible.…”

Section: Growth Conditionsmentioning

confidence: 99%

Recent advances in the development of infrared multispectral 128²FPAs

et al. 2002

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In this paper we present a status of the activity of the LETI infrared laboratory in the field of HgCdTe infrared multispectral detectors. The multilayer doped structures needed to achieve two colour pixels are grown by molecular beam epitaxy (MBE) (211)HgCdTe on lattice matched CdZnTe substrates. The device structure is n+ppn and is spatially coherent. The long wavelength layer is a planar like n + /p diode and is made by ion implantation while the shorter wavelength p-n diode is made in-situ during the MBE growth using Indium impurity doping. The last junction is isolated by mesa etch. The detectors are interconnected by indium bumps to a CMOS readout circuit. One or two indium bumps per pixel are used to address sequentially or simultaneously the two wavelengths, the detector pitch being 50µm or 60µm respectively. Elementary detectors exhibit performances in each band which are very close to those obtained in single colour detectors with our standard technology. The Si-CMOS read-out circuits are specially designed to optimise the best performance of the IRCMOS focal plane arrays (FPA) in both wavelengths. The electrooptical performances of a two colour IRCMOS FPA with a complexity of 128×128 pixels (pitch of 50µm) operating sequentially within the (3-5µm) middle wavelength infrared range (MWIR) at 77K will be presented.

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“…The Si substrate is transparent to the output beam and also acts as a mechanical pro- tection. This is at variance to its II-VI counterpart, where an expensive CdZnTe-substrate and lift-off techniques had to be employed [9].…”

Section: Introductionmentioning

confidence: 99%