34.2: PMMA Buffer‐Layer Effects on Electrical Performance of Pentacene OTFTs with a Cross‐linked PVA Gate Insulator on a Flexible Substrate

Jin, Sung Hun; Yu, Jong Pil; Kim, J. W.; Lee, C. A.; Park, B.-G.; Lee, J. D.; Lee, J. H.

doi:10.1889/1.1832477

Cited by 22 publications

(12 citation statements)

References 13 publications

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“…Similarly, negative shifts in V T have been reported in literature for PVA/PMMA bilayer devices. [ 21 ] Importantly, the incorporation of the TPCL layer above PVA C also resulted in improved reproducibility, as indicated by the lower variance in data values that were measured for all OTFT parameters shown in Figure 6. Further, the TPCL film leads to a decrease in the surface roughness at the OSC/dielectric interface.…”

Section: Discussionmentioning

confidence: 99%

“…[ 12,18–20 ] Within the literature there are several examples of improved device performance through the use of a low‐k/PVA bilayer dielectric. [ 15,21–23 ] However, all these examples use non‐environmentally friendly low‐ k materials that cannot be orthogonally processed for example: poly(methyl methacrylate) (PMMA) and polystyrene.…”

Section: Introductionmentioning

confidence: 99%

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High Performance Organic Electronic Devices Based on a Green Hybrid Dielectric

Tousignant

Rice

Niskanen

et al. 2021

Adv Elect Materials

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As the cost of electronics decreases, the demand for short‐term and single‐use applications, such as smart packaging, increases. Consequently, there is significant need for electronically active biodegradable materials to reduce the environmental impact of disposable electronic devices. A bilayer dielectric is developed based on environmentally friendly, low‐cost solution‐processable polymers, fabricated by thermally crosslinking a toluene diisocyanate‐terminated polycaprolactone (TPCL) layer with the hydroxyl groups of a poly(vinyl alcohol)/cellulose nanocrystal (CNC) blended dielectric (PVAC). Metal–insulator–metal (MIM) capacitors are fabricated and characterized under ambient and humid conditions. The incorporation of a TPCL layer in the bilayer dielectric results in a large reduction in moisture sensitivity when compared to neat PVAC without significantly altering the dielectric constant. When utilized as a dielectric in organic thin‐film transistors (OTFTs), the transistors prepared with the PVAC/TPCL dielectric have greater on/off ratios and hole mobilities, with reduced hysteresis compared to devices fabricated with PVAC. Furthermore, the fabricated OTFTs function at operating voltages six times lower when compared against a traditional silicon dioxide (SiO2) dielectric. The facile processing, combined with superior device performance, makes this green bilayer dielectric a promising candidate material for biodegradable disposable electronic applications.

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Section: Discussionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

High Performance Organic Electronic Devices Based on a Green Hybrid Dielectric

Tousignant

Rice

Niskanen

et al. 2021

Adv Elect Materials

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“…5 PVA suffers from sensitivity to moisture, which reduces the reliability and stability of the fabricated devices. 8,9 For printed electronic applications, it is also favorable to process these materials using environmentally friendly solvents such as water-and alcohol-based solvents. 10 Finally, the manufacturing of thin film electronics, such as transistors, requires the sequential deposition of different layers using different (orthogonal) solvents that do not dissolve the previous layer.…”

Section: ■ Introductionmentioning

confidence: 99%

Interfacial Ultraviolet Cross-Linking of Green Bilayer Dielectrics

Tousignant

Lin

Brusso

et al. 2023

ACS Appl. Mater. Interfaces

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Electronic waste is a growing challenge which needs to be addressed through the integration of high-performance sustainable materials. Green dielectric polymers such as poly(vinyl alcohol) (PVA) have favorable electrical properties but are challenging to integrate into thin film electronics due to their physical properties. For example, PVA suffers from poor film formation and is hygroscopic. Bilayer dielectrics with interfacial cross-linking can enable the use of high-performance PVA with favorable surface chemistry by using a hydrophobic poly(caprolactone) (PCL) layer. In this study, we developed a benzodioxinone-terminated PCL layer, which can be UV cross-linked to the hydroxy groups of the PVA dielectric. This air-stable UV-cross-linking PCL dielectric was able to effectively cross-link with PVA, leading to high-performance capacitors and single-walled carbon nanotube-based thin film transistors. This UV cross-linking PCL dielectric led to significant improvements in shelf-life, ease of processing, and similar device performance compared to our previously reported thermally cross-linking PCL layer. The UV cross-linking at the interface between these bilayers can allow for the integration of high-speed roll-to-roll processing, which enables low-cost, sustainable, and high-performance electronics.

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“…The cross-linked PVA with a PMMA buffer layer has been used as a gate dielectric in organic TFTs, where the PMMA buffer layer much improves the interface properties between the organic gate dielectric layer and the semiconductor active layer. 20,21 Moreover, it can be formed at a relatively low temperature, which minimizes the damage to the SnO channel layer during the TG dielectric formation. Finally, a TG electrode was formed using Ni on the PMMA/PVA TG dielectric layer.…”

Section: Introductionmentioning

confidence: 99%

Enhancement mode p-channel SnO thin-film transistors with dual-gate structures

Choi

Han

Jeong

et al. 2015

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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The authors demonstrate the enhancement mode p-type SnO thin-film transistors (TFTs) using dual gate (DG) structures. The cross-linked polyvinyl alcohol dielectric with a polymethylmethacrylate buffer layer is formed as a top gate (TG) insulator of the DG SnO TFT. The fabricated DG SnO TFT exhibits better electrical performances than the bottom gate (BG) and TG SnO TFTs including higher field-effect mobility and smaller subthreshold slope. In fabricated DG TFTs, the threshold voltage (Vth) of the BG TFT is linearly modulated by the voltage applied to the TG electrode. The BG transfer curve exhibits a depletion mode operation when measured while TG is grounded, but operates in the enhancement mode with a negative Vth (=−0.9 V) when a positive bias of 10 V is applied to the TG electrode. The enhancement mode operation of p-type SnO TFTs can increase the output voltage swing range and decreases the off-stage leakage currents of the complementary logic circuits.

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34.2: PMMA Buffer‐Layer Effects on Electrical Performance of Pentacene OTFTs with a Cross‐linked PVA Gate Insulator on a Flexible Substrate

Cited by 22 publications

References 13 publications

High Performance Organic Electronic Devices Based on a Green Hybrid Dielectric

High Performance Organic Electronic Devices Based on a Green Hybrid Dielectric

Interfacial Ultraviolet Cross-Linking of Green Bilayer Dielectrics

Enhancement mode p-channel SnO thin-film transistors with dual-gate structures

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