340 GHz On-Chip 3-D Antenna With 10 dBi Gain and 80% Radiation Efficiency

Deng, Xiaodong; Li, Yihu; Liu, Chao; Wu, Wen; Xiong, Yujie

doi:10.1109/tthz.2015.2424682

Cited by 98 publications

(44 citation statements)

References 26 publications

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“…The resonating mode in the SIW back cavity is , which can excite the patch to work at mode [19]. The distance between the shorted terminal and the radiation patch is designed to form a resonator, which can reflect the power back to the patch aperture.…”

Section: ) On-chip Antenna Element-unitmentioning

confidence: 99%

A 320-GHz 1<formula formulatype="inline"><tex Notation="TeX">$\times$</tex></formula>4 Fully Integrated Phased Array Transmitter Using 0.13-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m SiGe BiCMOS Technology

Deng

Li²,

Li³

et al. 2015

IEEE Trans. THz Sci. Technol.

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This paper presents a 320-GHz 1 4 fully integrated phased array transmitter using 0.13-m SiGe BiCMOS technology. The 1 4 array transmitter is aiming for terahertz wireless communication and is based on RF beam forming architecture. By integrating a 20-GHz phase-locked-loop (PLL) frequency synthesizer, an 80-GHz quadrupler, a 1:4 Wilkinson power divider network, four-way 80-GHz tunable attenuators, amplifiers, analog phase shifters, 320-GHz frequency quadruplers/modulators, and on-chip antenna arrays, the transmitter chip achieves a maximal EIRP of 10.6 dBm at 320 GHz with the 3-dB bandwidth of 20 GHz, and beam scanning range is obtained. The dc consumption of the whole chip is 1000 mW and the total chip size is 8 4.3 mm .

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Section: ) On-chip Antenna Element-unitmentioning

confidence: 99%

A 320-GHz 1<formula formulatype="inline"><tex Notation="TeX">$\times$</tex></formula>4 Fully Integrated Phased Array Transmitter Using 0.13-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m SiGe BiCMOS Technology

Deng

Li²,

Li³

et al. 2015

IEEE Trans. THz Sci. Technol.

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“…In such systems an antenna plays an important component to interface the terahertz signal with free-space. Various THz antennas have been reported in the literature including dipole antenna, spiral antenna, graphene antenna, leaky wave antenna, on-chip antenna, Yagi-Uda antenna and butterfly shaped antenna [1][2][3][4][5][6][7]. Close examination of these antennas reveals their limitations, particularly in the way they interact with electromagnetic waves for optimum impedance matching necessary for effective detection and their construction [8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

High Performance On-Chip Array Antenna Based on Metasurface Feeding Structure for Terahertz Integrated Circuits

Alibakhshikenari

Virdee

See

et al. 2019

2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

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In this letter, a novel on-chip array antenna with high-performances is investigated which is based on CMOS 20ȝm Silicon technology for operation over 0.6-0.65 THz. The proposed array structure is constructed on three layers composed of Silicon-Ground-Silicon layers. The ground-plane has sandwiched between two silicon layers. Two antennas are implemented on the top layer, where each antenna is constituted from three subantennas. The sub-antennas are constructed from interconnected dual-rings. Also, the sub-antennas are interconnected to each other. This approach enlarges the effective aperture area of the array, which has caused to improve its performance parameters. Surface waves and substrate losses in the structure are suppressed with the metallic via-holes that have inserted through the three layers and implemented between the radiation elements. To excite the structure, a novel feeding mechanism is used comprising opencircuited microstrip lines located on the back side of the structure, which couple the electromagnetic energy from the bottom layer to the antennas on the top-layer through metasurface slot-lines in the middle ground-plane layer. The results show the proposed on-chip antenna array has an average radiation gain, efficiency, and isolation of 7.62 dBi, 32.67%, and-30 dB, respectively.

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“…Nevertheless, this difficulty can be well overcome by DRA fed with planar slot due to its simple structure [26,27,28]. It has been used in terahertz band [29,30]. However, there is lack of dual-mode antenna design excited by planar slot structure.…”

Section: Introductionmentioning

confidence: 99%

Dual-mode dielectric resonator antenna and array fed by planar slot

Teng

Huang

2019

IEICE Electron. Express

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A dual-mode dielectric resonator antenna (DRA) and array fed by planar slot are presented. The bandwidth is expanded by merging the adjacent bands corresponding to and modes. The measured results are in good agreement with the simulated ones. The measured −10 dB bandwidth is 17.8% and the average gain is 6.5 dBi. Furthermore, a 2 × 2 DRA array is developed, which is improved with 45.5% impedance bandwidth and a peak gain of 12.6 dBi. The proposed dual-mode dielectric resonator antenna structure is promising for high-frequency applications due to its merits of simple feeding structure and wide band.

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340 GHz On-Chip 3-D Antenna With 10 dBi Gain and 80% Radiation Efficiency

Cited by 98 publications

References 26 publications

A 320-GHz 1<formula formulatype="inline"><tex Notation="TeX">$\times$</tex></formula>4 Fully Integrated Phased Array Transmitter Using 0.13-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m SiGe BiCMOS Technology

A 320-GHz 1<formula formulatype="inline"><tex Notation="TeX">$\times$</tex></formula>4 Fully Integrated Phased Array Transmitter Using 0.13-<formula formulatype="inline"><tex Notation="TeX">$\mu$</tex></formula>m SiGe BiCMOS Technology

High Performance On-Chip Array Antenna Based on Metasurface Feeding Structure for Terahertz Integrated Circuits

Dual-mode dielectric resonator antenna and array fed by planar slot

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