35.3: Distinguished Paper: A Novel Self‐Aligned Top‐Gate Oxide TFT for AM‐OLED Displays

Abstract

We developed a novel self-aligned top-gate oxide TFT for AM-OLED displays. Our developed Al reaction method to obtain source/drain regions is effective to fabricate a short channel and highly reliable TFT. A 9.9-inch diagonal qHD AM-OLED display was demonstrated to provide applicable solution for a large-sized and ultra-high definition OLED mass production.

Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors

“…This can be attributed to the unstable diffusion profiles of hydrogen in the case of the hydrogen plasma and the recovery of the generated defects (an In-rich surface) in the case of the Ar plasma. Furthermore, Morosawa et al reported SA TFTs with a-IGZO where the S/D regions were reduced by metallic Ti and Al [15]. The process involves deposition of a very thin layer (5-10 nm) of the metal, followed by a high stemperature anneal ( > 300°C) to form their oxides.…”

P‐6: Impact of Buffer Layers on the Self‐Aligned Top‐Gate a‐IGZO TFT Characteristics

“…Amorphous oxide semiconductors (AOSs) TFTs with large gate-source/drain (S/D) overlap like in conventional back-channel-etch (BCE) and etchstop-layer (ESL) configurations are less suitable [3][4]. Selfaligned (SA) TFT configuration as introduced by Sony [5] is preferred. In SA top-gate configuration, the surface on which semiconductor needs to be deposited is an integration challenge due to its direct influence.…”

46.5L: Late‐News Paper: Large Area Sputtered Al2O3 Films for High Mobility AM‐TFT Backplanes on PVD Array System PiVot 55kVi2

“…Indium-Gallium-Zinc-Oxide (IGZO) is a common material used as active channel material by display manufacturers to serve this new market [1][2]. But as reported by Arai et al [3] and Morosawa et al [4] special protection of the active layer is needed to ensure longtime-stability under stressed conditions. An additional sputtered Al 2 O 3 barrier layer was shown to provide the required device stability.…”