35-Gb/s VCSEL-Based Optical Link using 32-nm SOI CMOS Circuits

Proesel, Jonathan E.; Lee, B. G.; Baks, Christian; Schow, Clint L.

doi:10.1364/ofc.2013.om2h.2

Cited by 62 publications

(26 citation statements)

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“…As a result the fraction of the energy per bit required by only the 850 nm VCSEL is only a few percent at most of the overall dissipated energy. In related and parallel work another IBM group demonstrated 850 nm data transmission across about 4 m of MMF at 25 Gbit/s with an overall link energy efficiency of only ~1 pJ/bit by using a VCSEL driver IC made from a silicon-on-insulator (SOI) complementary metal-oxide-silicon (CMOS) technology [3]. In this latter work the aim was to optimize the overall energy efficiency, and the fraction of the power consumed by only the VCSEL was much higher at ~41%.…”

Section: Introductionmentioning

confidence: 99%

Energy efficiency, bit rate, and modal properties of 980 nm VCSELs for very-short-reach optical interconnects

Moser

Wolf

et al. 2014

SPIE Proceedings

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Via experimental results supported by numerical modeling we report the energy-efficiency, bit rate, and modal properties of GaAs-based 980 nm vertical cavity surface emitting lasers (VCSELs). Using our newly established Principles for the design and operation of energy-efficient VCSELs as reported in the Invited paper by Moser et al. [1] along with our high bit rate 980 nm VCSEL epitaxial designs that include a relatively large etalonto-quantum well gain-peak wavelength detuning of about 15 nm we demonstrate record error-free (bit error ratio below 10 -12 ) data transmission performance of 38, 40, and 42 Gbit/s at 85, 75, and 25°C, respectively. At 38 Gbit/s in a back-toback test configuration from 45 to 85°C we demonstrate a record low and highly stable dissipated energy of only ~179 to 177 fJ per transmitted bit. We conclude that our 980 nm VCSELs are especially well suited for very-short-reach and ultra-short-reach optical interconnects where the data transmission distances are about 1 m or less, and about 10 mm or less, respectively.

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Section: Introductionmentioning

confidence: 99%

Energy efficiency, bit rate, and modal properties of 980 nm VCSELs for very-short-reach optical interconnects

Moser

Wolf

et al. 2014

SPIE Proceedings

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“…It is almost three times more efficient than a long-wavelength transmitter consisting of an electroabsorption modulated edge-emitting laser [4]. The CMOS driver reports the best efficiency of them all [9], but the four-stage design (no FFE) is far less complex compared to our design and 32 nm SOI CMOS is a much more advanced process than 0.13 µm SiGe BiCMOS.…”

Section: Resultsmentioning

confidence: 74%

40 Gb/s PAM-4 Transmitter IC for Long-Wavelength VCSEL Links

Soenen

Vaernewyck

Yin

et al. 2015

IEEE Photon. Technol. Lett.

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Abstract-Conventional 850 nm multi-mode fiber (MMF) links deployed in warehouse-scale data centers will be limited by modal dispersion beyond 10 Gb/s when covering distances up to 1 km. This can be resolved by opting for a single-mode fiber (SMF), but typically requires the use of power-hungry edgeemitting lasers. We investigate the feasibility of a high-efficiency SMF link by reporting a 0.13 µm SiGe BiCMOS laser diode driver optimized for long-wavelength vertical-cavity surfaceemitting lasers (VCSEL). Bit-error rate experiments at 28 Gb/s and 40 Gb/s up to 1 km of SMF reveal that four-level pulse amplitude modulation (PAM-4) can compete with non-returnto-zero (NRZ) in terms of energy efficiency and scalability. With 9.4 pJ/bit, the presented transmitter paves the way for VCSELbased SMF links in data centers.

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“…In Table 1, in the column related to the TX side, the values added to the VCSEL dissipation are reported. Regarding the RX side, we used experimental data coming from [29]. For 4-PAM format, a simple receiver constituted by three comparison devices, each one for the three necessary thresholds, is employed, avoiding the need of complex ADCs.…”

Section: Power Consumption Evaluationmentioning

confidence: 99%

Performance analysis of communication links based on VCSEL and silicon photonics technology for high-capacity data-intensive scenario

Boletti¹,

Boffi²,

Martelli³

et al. 2015

Opt. Express

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To face the increased demand for bandwidth, cost-effectiveness and simplicity of future Ethernet data communications, a comparison between two different solutions based on directly-modulated VCSEL sources and Silicon Photonics technologies is carried out. Also by exploiting 4-PAM modulation, the transmission of 50-Gb/s and beyond capacity per channel is analyzed by means of BER performance. Applications for optical backplane, very short reach and in case of client-optics networks and intra and inter massive data centers communications (up to 10 km) are taken into account. A comparative analysis based on the power consumption is also proposed.

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35-Gb/s VCSEL-Based Optical Link using 32-nm SOI CMOS Circuits

Cited by 62 publications

References 1 publication

Energy efficiency, bit rate, and modal properties of 980 nm VCSELs for very-short-reach optical interconnects

Energy efficiency, bit rate, and modal properties of 980 nm VCSELs for very-short-reach optical interconnects

40 Gb/s PAM-4 Transmitter IC for Long-Wavelength VCSEL Links

Performance analysis of communication links based on VCSEL and silicon photonics technology for high-capacity data-intensive scenario

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