35 μm cutoff bound-to-quasibound and bound-to-continuum InGaAs QWIPs

Perera, A. G. U.; Matsik, S. G.; Liu, H.C.; Gao, M.; Buchanan, M.; Schaff, William J.; Yeo, W.

doi:10.1016/s1350-4495(01)00071-8

Cited by 5 publications

(1 citation statement)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The molecular beam epitaxy (MBE) and metalorganic chemical vapour deposition (MOCVD) techniques can achieve high uniformity of semiconductor parameters across the entire GaAs/AlGaAs QWIP wafers, which allows for large FPAs of QWIPs with low spatial (fixed) pattern noise, low cost, thermal stability and the use of standard manufacturing techniques based on mature GaAs processing technologies. Even though QWIP is a photoconductor, its several properties such as high impedance, fast response time, a better NEDT and low power consumption well comply with the requirements of VWIR large FPAs fabrication [1][2][3][4][5] . This paper presents a 256×1 linear array multiple QWIP FPA design, processing and characterization.…”

mentioning

confidence: 99%

The theory and experiment of very-long-wavelength 256×1 GaAs/Al x Ga1−x As quantum well infrared detector linear arrays

Guo

Xiong

et al. 2008

Sci. China Ser. G-Phys. Mech. Astron.

View full text Add to dashboard Cite

The 256×1 linear array of multiple quantum wells infrared photodetector (QWIP) is designed and fabricated for the peak response wavelength at λ P = 14.6 μm. The response spectral width is bigger than 2.2 μm. The two-dimensional (2D) diffractive coupling grating has been formed on the top QWIP photosensitive pixel for coupling the infrared radiation to the infrared detective layers. The performance of the device at V B = 3 V and T = 45 K has the responsibility 4.28×10 −2 (A/W), the blackbody detectivity D b * = 5.14×10 9 (cm·Hz 1/2 /W), and the peak detectivity D λ * = 4.24× 10 10 (cm⋅Hz 1/2 /W). The sensor pixels are connected with CMOS read out circuit (ROC) hybridization by indium bumps. When integral time is 100 μs, the linear array has the effective pixel of QWIP FPA N ef of 99.2%, the average responsibility R (V/W) of 3.48×10 6 (V/W), the average peak detectivity D λ * of 8.29×10 9 (cm·Hz 1/2 /W), and the non-uniformity U R of 5.83%. This device is ready for the thermal image application. quantum well, focal plane arrays, very long wavelength, infrared detector, diffraction gratingThe IR imaging systems that operate in the very long wavelength IR (VWIR) region are required in the space detection applications due to their correlation with the CO 2 absorption band. The square quantum wells are designed in such a way that the energy separation between the first excited state and ground state matches the energy of the infrared photons to be detected, which can cover the response wavelength from 3 to 18 µm for quantum well infrared photoconductor (QWIP). Both HgCdTe photodiodes and QWIPs have demonstrated the capability in the LWIR range. The performance figures of merit of state-of-the-art for QWIP and HgCdTe FPAs are similar because the main limitations come from the readout circuits. However, the HgCdTe process yield is low for

show abstract

mentioning

confidence: 99%