36.3: <i>Invited Paper:</i> Color Phosphors for Inorganic Electroluminescent Devices

Miura, N.

doi:10.1889/1.1825717

Cited by 5 publications

(2 citation statements)

References 14 publications

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“…CaAl 2 S 4 :Eu,Gd was reported as an efficient green TFEL phosphor, with a luminance of 3000 cd/m² at 1 kHz and was prepared with a dual source e-beam technique [ 131 ]. With this phosphor, a wider color gamut can be obtained in comparison to SrGa 2 S 4 :Eu [ 132 ].…”

Section: Thin Film Electroluminescencementioning

confidence: 99%

Luminescence in Sulfides: A Rich History and a Bright Future

et al. 2010

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Sulfide-based luminescent materials have attracted a lot of attention for a wide range of photo-, cathodo- and electroluminescent applications. Upon doping with Ce3+ and Eu2+, the luminescence can be varied over the entire visible region by appropriately choosing the composition of the sulfide host. Main application areas are flat panel displays based on thin film electroluminescence, field emission displays and ZnS-based powder electroluminescence for backlights. For these applications, special attention is given to BaAl2S4:Eu, ZnS:Mn and ZnS:Cu. Recently, sulfide materials have regained interest due to their ability (in contrast to oxide materials) to provide a broad band, Eu2+-based red emission for use as a color conversion material in white-light emitting diodes (LEDs). The potential application of rare-earth doped binary alkaline-earth sulfides, like CaS and SrS, thiogallates, thioaluminates and thiosilicates as conversion phosphors is discussed. Finally, this review concludes with the size-dependent luminescence in intrinsic colloidal quantum dots like PbS and CdS, and with the luminescence in doped nanoparticles.

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Section: Thin Film Electroluminescencementioning

confidence: 99%

Luminescence in Sulfides: A Rich History and a Bright Future

et al. 2010

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“…The emission of an as-deposited sample slightly shifted to a longer wavelength region compared with that of the device annealed at 800 C, although the blue EL with a peak at 475 nm was observed at a substrate temperature of 650 C during the deposition. 8,9) Tanaka and Okamoto also obtained the BaAl 2 S 4 :Eu phosphor films without an annealing process by a molecular-beam epitaxy (MBE) system. 10) Under the phosphor preparation conditions with the MBE method, substrate temperature is still high, and it was reported that a flux agent is necessary to improve the crystallinity of thinfilm phosphors.…”

Section: Introductionmentioning

confidence: 99%

Effects of Fluoride Dopants in the Starting Materials for BaAl₂S₄:Eu Thin-Film Phosphors

Guo¹,

Miura²,

Matsumoto³

et al. 2010

Jpn. J. Appl. Phys.

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BaF 2 and AlF 3 were used for the preparation of BaAl 2 S 4 :Eu thin-film phosphors. The blue emission with a peak at 470 nm was obtained particularly because the process temperature was not sufficient for obtaining a peak at 470 nm in the case of a conventional technique. The intensity of the blue emission from BaAl 2 S 4 :Eu phosphors prepared using fluoride compounds was higher than that of phosphors prepared without fluoride compounds, and the appropriate annealing temperature decreased during the preparation process. It is considered that BaF 2 and AlF 3 enhanced the reaction of starting materials and accelerated the crystallization of BaAl 2 S 4 . The crystallinity and mean crystal particle size of BaAl 2 S 4 :Eu phosphors prepared using fluoride compounds were improved. This is due to the fluoride compounds effectively acting as flux materials.

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Hot carrier type exchange in inorganic electroluminescent thin films

Tanaka¹,

Okamoto²

2006

Applied Physics Letters

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The authors have observed the hot carrier type (holes or electrons) exchange in rare-earth-ion-activated strontium thiogallate (SrGa2S4) thin films by measuring the transient electroluminescent wave forms of the devices having a single insulating thin film. Measured wave forms revealed that the green electroluminescence of europium activated SrGa2S4 thin film occurs due to hot hole excitation. In contrast, the blue electroluminescence of cerium activated SrGa2S4 thin film occurs due to hot electron excitation. Hence, the hot carrier type is exchanged by the different rare-earth-ion doping.

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36.3: Invited Paper: Color Phosphors for Inorganic Electroluminescent Devices

Cited by 5 publications

References 14 publications

Luminescence in Sulfides: A Rich History and a Bright Future

Luminescence in Sulfides: A Rich History and a Bright Future

Effects of Fluoride Dopants in the Starting Materials for BaAl₂S₄:Eu Thin-Film Phosphors

Hot carrier type exchange in inorganic electroluminescent thin films

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36.3: Invited Paper: Color Phosphors for Inorganic Electroluminescent Devices

Cited by 5 publications

References 14 publications

Luminescence in Sulfides: A Rich History and a Bright Future

Luminescence in Sulfides: A Rich History and a Bright Future

Effects of Fluoride Dopants in the Starting Materials for BaAl2S4:Eu Thin-Film Phosphors

Hot carrier type exchange in inorganic electroluminescent thin films

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Effects of Fluoride Dopants in the Starting Materials for BaAl₂S₄:Eu Thin-Film Phosphors