37.1: Invited Paper: Nanosheet High Mobility SnO₂‐SnO Complementary TFTs for System‐on‐Display and Monolithic Three‐Dimensional Integrated Circuit

Abstract

The top-gate 4.5-nm-thick SnO2 nanosheet nTFT has the high 136 cm 2 /Vs field-effect mobility (FE), sharp 1.5x10 8 oncurrent/ off-current (ION/IOFF), and fast turn-on subthreshold slope (SS) of 108 mV/decade. The top-gate 7-nm-thick nanosheet SnO pTFT has a high μFE of 4.4 cm 2 /Vs, large ION/IOFF of 1.2×10 5 , and SS of 526 mV/decade. These CTFTs will enable the system-on-panel (SoP) and Monolithic Three-Dimensional (3D) Integrated Circuit (IC).