37 W, 75–100 GHz GaN power amplifier

Schellenberg, J.M.; Tran, Alex; Bui, Lani; Cuevas, Andrew; Watkins, E. T.

doi:10.1109/mwsym.2016.7540195

Cited by 32 publications

(11 citation statements)

References 4 publications

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“…Higher output power can also be achieved by employing off-chip waveguide combiners. For instance, an outstanding high power 45.6 dBm GaN amplifier module has been demonstrated from 75 to 100 GHz using septum combiners and 12-way radial combiners [22] [169].…”

Section: W-band (75-110 Ghz)mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: W-band (75-110 Ghz)mentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

139

View full text Add to dashboard Cite

show abstract

“…W 대역을 활용한 고정밀 탐지 레이다 및 통신의 경 우 정밀도 향상과 원거리 탐지 또는 통신을 위해 기존과 비교해 높은 증폭기 출력을 요구하고 있다. 그러나, W 대 역의 경우, transistor의 성능 저하로 인해 MMIC를 통한 전력 증폭에 어려움이 있을 뿐만 아니라, 높은 손실로 인 해 전력 결합에도 큰 어려움이 발생하고 있다 [1] .…”

Section: ⅰ 서 론unclassified

Waveguide Power Combiner Using E-Plane Signal Transition Structure and Resistive Septum for W-Band High Power Amplifier Applications

Bae¹,

Chang²,

Kim³

et al. 2022

J. Korean Inst. Electromagn. Eng. Sci.

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In this study, a wideband, low-loss waveguide power combiner is designed and manufactured using a waveguide-to-microstrip signal transition feed and resistive septum, which can be applied to waveguides in the W-band. The waveguide power combiner has a T-junction structure and is implemented by locating the transition feed at a length of λ/4, where the E-field is maximized, and combining the resistive septum manufactured by the NiCr thin film process. The performance is verified using a passive integrated circuit IC in the form of a microstrip line matched with 50 Ω to the manufactured combiner, and the combined characteristics according to the presence or absence of a resistive septum are confirmed by mounting a power amplifier PA. The isolation of the combiner with the resistive septum is −15 dB compared with the 9 dB without a resistive septum, which improves the simulation results. The power combining module manufactured using the passive IC exhibits a low insertion loss of approximately 0.75 dB (@ 78 GHz) after the output stage with the transition structure and including the resistive septum structure. As a result of constructing a power combining module with a waveguide structure using an MMIC with an amplification gain of approximately 20 dB and an output performance of 26 dBm, in the absence of a resistive septum, a low-power-combining characteristic of approximately 8 dB gain and 14 dBm is achieved. When a resistive septum is applied, it exhibits a stable amplification gain of approximately 18 dB and output performance of 28.4 dBm (2.4 dB combined gain).

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“…Gallium-nitride (GaN) technology is also promising for infrastructure thanks to its inherent high-power handling and generation capability. A 2 W power amplifier IC and a 37 W module employing the IC was demonstrated up to 100 GHz using a 0.15 µm GaN process [52,73]. Its manufacturability is expected to be improved as GaN technologies are being adopted into 5G infrastructure [74].…”

Section: Terahertz Devicesmentioning

confidence: 99%

A Perspective on Terahertz Next-Generation Wireless Communications

et al. 2019

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In the past year, fifth-generation (5G) wireless technology has seen dramatic growth, spurred on by the continuing demand for faster data communications with lower latency. At the same time, many researchers argue that 5G will be inadequate in a short time, given the explosive growth of machine connectivity, such as the Internet-of-Things (IoT). This has prompted many to question what comes after 5G. The obvious answer is sixth-generation (6G), however, the substance of 6G is still very much undefined, leaving much to the imagination in terms of real-world implementation. What is clear, however, is that the next generation will likely involve the use of terahertz frequency (0.1–10 THz) electromagnetic waves. Here, we review recent research in terahertz wireless communications and technology, focusing on three broad topic classes: the terahertz channel, terahertz devices, and space-based terahertz system considerations. In all of these, we describe the nature of the research, the specific challenges involved, and current research findings. We conclude by providing a brief perspective on the path forward.

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37 W, 75–100 GHz GaN power amplifier

Cited by 32 publications

References 4 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Waveguide Power Combiner Using E-Plane Signal Transition Structure and Resistive Septum for W-Band High Power Amplifier Applications

A Perspective on Terahertz Next-Generation Wireless Communications

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