“…where V TH0 is the original threshold voltage of the dual-gate TFT at zero photodiode bias without illumination, γ is the parameter that dictates the top gate controllability over the threshold voltage. V TG0 is the top gate voltage at a fixed photodetector bias without illumination, and is a function of the anode voltage (V Bias ), the MIS photodiode capacitance (C MIS ), and the top gateinsulator-semiconductor capacitance of the dual-gate LTPS TFT (C TOP ), which can be described as follows: (2) and ΔV TG , the photo-induced voltage on the top gate, is a function of photogenerated charges Q e and C TOP:…”