38-GHz CMOS Linearized Receiver With IM3 Suppression, <i>P</i>
                  <sub>1 dB</sub>/IP3/RR3 Enhancements, and Mitigation of QAM Constellation Diagram Distortion in 5G MMW Systems

Chen, Chun-Nien; Chen, Ying; Wang, Yunshan; Kuo, Tai-Yu; Wang, Huei

doi:10.1109/tmtt.2020.2981461

Cited by 17 publications

(2 citation statements)

References 27 publications

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“…As the key sub-system in the wideband wireless systems, the receiver (RX) should be developed with high dynamic range and high signal quality within a wide operating frequency range. Therefore, multiple technologies, such as linearity improvement [1], [2] and noise canceling [3], [4], are developed and introduced to the wideband RX with sub-circuit designs. However, the ever-developing of modern and coming wireless applications (e.g., 5G, vehicles, and intelligent manufacturing) occupies the spectrum and makes the wideband RX operate in a complicated electromagnetic (EM) environment, where multiple in-band RF signals (i.e., desired signal, imaging signals, and blockers) are received by the RX in practical applications.…”

Section: Introductionmentioning

confidence: 99%

A Reflectionless Receiver With Absorptive IF Amplifier and Dual-Path Noise-Canceling LNA

Deng

Qian

Luo

2022

IEEE J. Solid-State Circuits

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This article presents a 22.6-39.2-GHz reflectionless receiver (RX) capable of reducing the in-band intermodulation and high-order mixing products. Such RX consists of an absorptive IF amplifier, a double-balance passive mixer, and a dualpath noise-canceling low noise amplifier (LNA). The absorptive IF amplifier is utilized to suppress the out-of-band signal reflected back to mixer, which can reduce the intermodulation and high-order mixing products caused by the remixing of the outof-band signals. Meanwhile, the dual-path noise-canceling LNA is used for achieving low noise figure (NF) in a wide frequency range. To verify the aforementioned principle, a reflectionless RX is implemented and fabricated using a conventional 28-nm CMOS technology. The measurement shows the minimum NF of 3.6 dB and the peak input third-order intercept point (IIP3) of −11.7 dBm. Besides, the proposed RX can support multi-Gb/s, 256-quadratic amplitude modulation (QAM)/1024-QAM modulation signals.

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Section: Introductionmentioning

confidence: 99%

A Reflectionless Receiver With Absorptive IF Amplifier and Dual-Path Noise-Canceling LNA

Deng

Qian

Luo

2022

IEEE J. Solid-State Circuits

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“…In addition, the third-order intercept point (OIP3) can show the degree to which the main signal of the circuit can accept the interference of adjacent channels, and it is also an index to observe the linearity of the power amplifier. 21,22 Although some research reports 23,24 have been mentioned that the device performance parameters can be improved by changing the device geometry parameters, but they do not explore the linearity characteristics, such as OIP3 and IM3 of the device.…”

mentioning

confidence: 99%

Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications

Hsu

Lin

Yang

et al. 2023

ECS J. Solid State Sci. Technol.

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We investigated the device noise and linearity of an AlGaN/GaN HEMT with an optimized Γ-Gate structure for Ka-band applications. The Γ-Gate was used to provide low gate resistance for the device by increasing the gate cross-section and acting as a gate field plate to achieve a flat transconductance (Gm) profile. The device's Gm profile was analyzed under different gate positions, including at the center or close to the source. Under different bias conditions, we performed the optimization of the Γ-gate head length (Lhead). The results show that an excellent minimum noise figure (NFmin) for the device can be achieved when the Γ-gate is positioned close to the source with an optimum Lhead. Finally, the NFmin improved from 1.9 dB to 1.59 dB and the third-order intercept point (OIP3) value improved from 27.7 to 31.1 dBm when the source-drain distance was reduced from 2.5 to 2 μm. It was demonstrated that the optimized Γ-Gate design has the potential to attain the device with low noise and high linearity.

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Low Noise IQ Generation Employed in an Active Vector Modulator for 5G Ka-Band Beam Forming Transceivers

Mesgari

Zimmermann

2020

2020 International Conference on Broadband Communications for Next Generation Networks and Multimedia Applications (CoBCom)

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38-GHz CMOS Linearized Receiver With IM3 Suppression, P _{1 dB}/IP3/RR3 Enhancements, and Mitigation of QAM Constellation Diagram Distortion in 5G MMW Systems

Cited by 17 publications

References 27 publications

A Reflectionless Receiver With Absorptive IF Amplifier and Dual-Path Noise-Canceling LNA

A Reflectionless Receiver With Absorptive IF Amplifier and Dual-Path Noise-Canceling LNA

Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications

Low Noise IQ Generation Employed in an Active Vector Modulator for 5G Ka-Band Beam Forming Transceivers

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38-GHz CMOS Linearized Receiver With IM3 Suppression, P 1 dB/IP3/RR3 Enhancements, and Mitigation of QAM Constellation Diagram Distortion in 5G MMW Systems

Cited by 17 publications

References 27 publications

A Reflectionless Receiver With Absorptive IF Amplifier and Dual-Path Noise-Canceling LNA

A Reflectionless Receiver With Absorptive IF Amplifier and Dual-Path Noise-Canceling LNA

Study of Low Noise with High Linearity AlGaN/GaN HEMTs by Optimizing Γ-Gate Structure for Ka-Band Applications

Low Noise IQ Generation Employed in an Active Vector Modulator for 5G Ka-Band Beam Forming Transceivers

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About

38-GHz CMOS Linearized Receiver With IM3 Suppression, P _{1 dB}/IP3/RR3 Enhancements, and Mitigation of QAM Constellation Diagram Distortion in 5G MMW Systems