39‐3: <i>Invited Paper:</i> LTPO TFT Technology for AMOLEDs<sup>†</sup>

Chang, Tian-Sheuan; Lin, Chang‐Yu; Chang, Shihchang

doi:10.1002/sdtp.12978

Cited by 143 publications

(69 citation statements)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Typically, LTPO consists of LTPS‐TFT backplane for peripheral circuit and driving TFTs, and embedded AOS TFTs for switching TFTs (Figure 4f). 70 Therefore, low‐frequency driving is possible due to very low leakage current of AOS‐TFT, while the power consumption can be low by high μ LTPS and low‐frequency driving scheme. Also, the peripheral circuit size can become smaller by LTPS, which is advantageous for slim bezels.…”

Section: Amorphous Oxide Semiconductor Tftsmentioning

confidence: 99%

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

et al. 2020

View full text Add to dashboard Cite

As the need for super‐high‐resolution displays with various form factors has increased, it has become necessary to produce high‐performance thin‐film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a‐Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light‐emitting diode displays, and also to overcome the performance and reliability issues of a‐Si:H, low‐temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a‐Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next‐generation channel materials is discussed.

show abstract

Section: Amorphous Oxide Semiconductor Tftsmentioning

confidence: 99%

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

et al. 2020

View full text Add to dashboard Cite

show abstract

“…[6][7][8][9][10][11][12] Recently, lowtemperature polysilicon oxide (LTPO) is of increasing interest for the use of high mobility p-channel LTPS TFT and very low off-current a-IGZO TFT. [13][14][15][16][17] The combination of these two devices with the simplified process is key for its application to displays. LTPS TFT is suitable for switching transistors because of its high mobility, and oxide TFT has much lower off-state currents, which leads to control of the refresh time.…”

Section: Introductionmentioning

confidence: 99%

“…This leads to high manufacturing cost because the number of photomask steps is over 10. [17] In this work, we introduce a new approach for the GI layer deposition for both oxide and LTPS TFTs. A double-stack SiO 2 layer, deposited at HT and then LT separately, is used as a GI for LTPS TFT, leading to reduce the photomask steps.…”

Section: Introductionmentioning

confidence: 99%

Low‐Temperature Polysilicon Oxide Thin‐Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V⁻¹

et al. 2020

View full text Add to dashboard Cite

The low-temperature polysilicon oxide (LTPO) complementary metal-oxidesemiconductor (CMOS) thin-film transistors (TFTs) is fabricated by p-type lowtemperature polysilicon (LTPS) TFT and n-type amorphous indium-gallium-zinc oxide (a-IGZO) TFT using coplanar structure. A double-stack SiO 2 layer deposited by high temperature first and then low-temperature process is used as a gate insulator for LTPS TFT, leading to reduce the number of photomask steps. The p-channel LTPS TFT of the fabricated LTPO circuits exhibits the field-effect mobility (μ FE) and threshold voltage (V TH) of 89.9 cm 2 (V s) À1 and À5.5 V, respectively. However, the a-IGZO TFT exhibits the μ FE of 22.5 cm 2 (V s) À1 and V TH of À1.3 V. Both the LTPS TFT and a-IGZO TFT show excellent bias stability (ΔV TH of <0.1 V) and zero hysteresis voltage, which reveals the excellent interface between gate insulator and semiconductor. The LTPO CMOS inverter exhibits a gain of 264.5 V V À1 and a high noise margin of 4.29 V, and a low noise margin of 3.69 V at V DD of 8 V. Therefore, the LTPO TFT technology developed in this work can be a promising candidate for low cost, large-area manufacturing of display, and TFT electronics.

show abstract

“…In various applications, the presence of H is inevitable in the integrated processing of the IGZO TFTs and other device components. There are recent efforts to monolithically combine IGZO TFTs with photodiodes based on amorphous hydrogenated silicon (a-Si:H) for fingerprint sensing applications [5] and TFTs based on low-temperature polycrystalline silicon (LTPS) for low refresh-rate display applications [6]. Since a large amount of H is introduced when forming the a-Si:H photo-diodes or passivating the LTPS TFTs, the feasibility of such integration schemes demands a resolution of the issue of H crosscontamination during the processing.…”

Section: Introductionmentioning

confidence: 99%

24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation

Wang

Shi

et al. 2020

Symp Digest of Tech Papers

View full text Add to dashboard Cite

Amorphous indium-gallium-zinc oxide (IGZO) thin-film transistors (TFTs) with or without fluorinated channels were fabricated. The sensitivity of their electrical characteristics to hydrogen exposure was compared. It is shown that those built with fluorinated IGZO exhibit improved intrinsic resistance against hydrogen-induced degradation. Such improvement correlates well with the reduced incorporation of hydrogen in the fluorinated channels, as revealed by secondary ion-mass spectrometry. Fluorinated IGZO TFTs are better suited for integration with hydrogen-containing devices, such as photo-diodes based on amorphous hydrogenated silicon and TFTs based on low-temperature polycrystalline silicon.

show abstract

39‐3: Invited Paper: LTPO TFT Technology for AMOLEDs^†

Cited by 143 publications

References 3 publications

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

Low‐Temperature Polysilicon Oxide Thin‐Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V⁻¹

24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation

Contact Info

Product

Resources

About

39‐3: Invited Paper: LTPO TFT Technology for AMOLEDs†

Cited by 143 publications

References 3 publications

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides

Low‐Temperature Polysilicon Oxide Thin‐Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V−1

24‐2: Distinguished Student Paper: Fluorination for Enhancing the Resistance of Indium‐Gallium‐Zinc Oxide Thin‐Film Transistor against Hydrogen‐Induced Degradation

Contact Info

Product

Resources

About

39‐3: Invited Paper: LTPO TFT Technology for AMOLEDs^†

Low‐Temperature Polysilicon Oxide Thin‐Film Transistors with Coplanar Structure Using Six Photomask Steps Demonstrating High Inverter Gain of 264 V V⁻¹