3C–SiC on glass: an ideal platform for temperature sensors under visible light illumination

Foisal, Abu Riduan Md; Phan, Hoang‐Phuong; Kozeki, Takahiro; Dinh, Toan; Nguyen, Tuan‐Khoa; Qamar, Afzaal; Lobino, Mirko; Namazu, Takahiro; Dao, Dzung Viet

doi:10.1039/c6ra19418d

Cited by 12 publications

(10 citation statements)

References 33 publications

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“…4,5 Hence, the cost of a wafer is reduced signicantly and, most importantly, 3C-SiC is compatible with conventional N/MEMS technologies. 6,7 The proper metallization of any device is very important to obtain exact and accurate responses. However, the metallization of MEMS devices generally requires multiple timeconsuming processes (i.e., lithography and metal etching), expensive metal sources (e.g., Au, Ni, Al, and Ti), and specialized equipment, such as sputters and electron beam evaporators.…”

Section: Introductionmentioning

confidence: 99%

A rapid and cost-effective metallization technique for 3C–SiC MEMS using direct wire bonding

et al. 2018

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Section: Introductionmentioning

confidence: 99%

A rapid and cost-effective metallization technique for 3C–SiC MEMS using direct wire bonding

et al. 2018

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“…In order to gain insight into this phenomenon, we transferred the 3C-SiC thin-lm from Si to glass substrate using the FIB (Focused Ion Beam) technique (details of transferring process have been reported in 24 ). It was observed that the resistance of the transferred 3C-SiC thin lm remained almost constant under dierent illumination intensities (635 nm), reecting that due to the large band gap, 3C-SiC is insensitive to the applied illumination (See supporting information, Figure S4).…”

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confidence: 99%

Pushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure

Foisal¹,

Qamar²,

Phan³

et al. 2017

ACS Appl. Mater. Interfaces

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This letter reports a giant opto-piezoresistive effect in p-3C-SiC/p-Si heterostructure under visible-light illumination. The p-3C-SiC/p-Si heterostructure has been fabricated by growing a 390 nm p-type 3C-SiC on a p-type Si substrate using the low pressure chemical vapor deposition (LPCVD) technique. The gauge factor of the heterostructure was found to be 28 under a dark condition; however, it significantly increased to about -455 under illumination of 635 nm wavelength at 3.0 mW/cm. This gauge factor is over 200 times higher than that of commercial metal strain gauge, 16 times higher than that of 3C-SiC thinfilm, and approximately 5 times larger than that of bulk Si. This enhancement of the gauge factor was attributed to the opto-mechanical coupling effect in p-3C-SiC/p-Si heterostructure. The opto-mechanical coupling effect is the amplified effect of the photoconductivity enhancement and strain-induced band structure modification in the p-type Si substrate. These findings enable extremely high sensitive and robust mechanical sensors, as well as optical sensors at low cost, as no complicated nanofabrication process is required.

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“…To demonstrate the sensitivity enhancement in the proposed structure, we developed piezoresistive Subsequently, arrays of SiC nanowires were fabricated using focused ion beam with Ga + ions [26,27]. Finally, the Si membrane was formed by etching the Si substrates from the backside.…”

Section: Characterization Of Nanowires Based Pressure Sensorsmentioning

confidence: 99%

Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure

et al. 2018

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This paper presents highly sensitive pressure sensors using piezoresistive nanowires. Our approach is based on nanowires locally fabricated on free standing structures with a high strain concentration. This strain concentration phenomenon amplifies the strain induced into nano-scaled sensing elements while the bulk materials are still at small strain regime, therefore enhancing the sensitivity of the sensors. For proof of concept, we utilized SiC nanowire fabricated using focused ion beam from an epitaxially grown thin film. Experimental results show significant 3-fold enhancement in the sensitivity in comparison to conventional structures, which is in good agreement with analytical modeling and numerical simulation. The proposed design shows potential for the development of miniaturized highly sensitive but robust nano mechanical-sensors.

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3C–SiC on glass: an ideal platform for temperature sensors under visible light illumination

Abstract: This letter reports on cubic silicon carbide (3C–SiC) transferred on a glass substrate as an ideal platform for thermoresistive sensors which can be used for in situ temperature measurement during optical analysis.

Cited by 12 publications

References 33 publications

A rapid and cost-effective metallization technique for 3C–SiC MEMS using direct wire bonding

A rapid and cost-effective metallization technique for 3C–SiC MEMS using direct wire bonding

Pushing the Limits of Piezoresistive Effect by Optomechanical Coupling in 3C-SiC/Si Heterostructure

Highly sensitive pressure sensors employing 3C-SiC nanowires fabricated on a free standing structure

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