2014 IEEE 9th Nanotechnology Materials and Devices Conference (NMDC) 2014
DOI: 10.1109/nmdc.2014.6997419
|View full text |Cite
|
Sign up to set email alerts
|

3C-SiC on Si: A bio- and hemo-compatible material for advanced nano-bio devices

Abstract: Silicon carbide (SiC) has long been known as a robust semiconductor with superior properties to silicon for electronic applications. The cubic form of SiC, known as 3C-SiC, has been researched for non-electronic applications, such as

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1

Citation Types

0
17
0

Year Published

2016
2016
2021
2021

Publication Types

Select...
5
2

Relationship

0
7

Authors

Journals

citations
Cited by 16 publications
(17 citation statements)
references
References 15 publications
0
17
0
Order By: Relevance
“…The plasma field frequency was set to 13.56 MHz, substrate temperature to 250 °C, and pressure to 900 mTorr. Silane (SiH 4 ) and Methane (CH 4 ) were used as the reactive gas species at flow rates of 360 sccm and 12 sccm, respectively [ 25 ]. Argon (Ar) was used as the carrier gas with a flow rate of 500 sccm.…”
Section: Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…The plasma field frequency was set to 13.56 MHz, substrate temperature to 250 °C, and pressure to 900 mTorr. Silane (SiH 4 ) and Methane (CH 4 ) were used as the reactive gas species at flow rates of 360 sccm and 12 sccm, respectively [ 25 ]. Argon (Ar) was used as the carrier gas with a flow rate of 500 sccm.…”
Section: Methodsmentioning
confidence: 99%
“…Our group believes an alternative material strategy may address both issues simultaneously. The device would be constructed exclusively of one material which has a demonstrated track record of physical robustness, chemical inertness, and a great degree of biological tolerance: crystalline silicon carbide (SiC) [ 25 , 26 , 27 , 28 , 29 , 30 , 31 ]. Additionally, the amorphous form of SiC ( a -SiC) has also been demonstrated as an effective insulating coating which does not take up water and is very compatible with neural cells [ 25 , 32 , 33 ].…”
Section: Introductionmentioning
confidence: 99%
“…Helium (He), with a flow rate of 700 sccm, was used as the carrier gas. The RF power was set to 200 W, substrate temperature to 300 °C, and pressure to 1100 mTorr [37,38]. Following photoresist patterning using AZ 15nXT-450 CPS negative photoresist (Microchemicals GmbH), a reactive ion etch (RIE; PlasmaTherm) was run for 210 s to open windows in the a -SiC film for the electrode sites.…”
Section: Methodsmentioning
confidence: 99%
“…1). The Si material, which can be made by the bonding process on top of SiC [11, 12], is used to form the channel and ohmic contact for the source electrode. When VDMOS structure is turned off, the highest electric field is produced at the interface of the P‐base and N‐type drift region (area A in Fig.…”
Section: Device Structure and Descriptionmentioning
confidence: 99%