3D analysis of advanced nano-devices using electron and atom probe tomography

Grenier, Adeline; Duguay, S.; Barnes, Jean‐Paul; Serra, R.; Haberfehlner, Georg; Cooper, David; Bertin, F.; Barraud, S.; Audoit, G.; Arnoldi, L.; Cadel, E.; Chabli, Amal; Vurpillot, F.

doi:10.1016/j.ultramic.2013.10.001

Cited by 54 publications

(56 citation statements)

References 39 publications

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“…However, SDD-EDS is incapable for very light element, like ''Boron (B)'', and ineffective for the P+/PLDD profiling. The nano-analytical techniques of atom probe tomography (APT) [20][21][22] is capable of 3-dimension profiling but not popular in the FA Laboratory. Scanning capacitance microscopy (SCM) [23] or scanning spreading resistance microscopy (SSRM) [24,25] in atomic force microscopy (AFM) based techniques are not convinced to show profile for PLDD region.…”

Section: Following Pfamentioning

confidence: 99%

The device characteristics of missing LDD implantation via nanoprobing techniques for localized failure analysis

Lai

2015

Microelectronics Reliability

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Section: Following Pfamentioning

confidence: 99%

The device characteristics of missing LDD implantation via nanoprobing techniques for localized failure analysis

Lai

2015

Microelectronics Reliability

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“…The feasability of analysing well-established technologies such as MOS transistor [45], and more exotic structures such as FinFETs [46] or gate all aroud transistors (GAA) has been already demonstrated [47]. However, these structures nowadays contain a wide variety of materials that may have very different evaporation fields.…”

Section: Distribution Of Dopants Within a P-mos Devicementioning

confidence: 99%

“…The dopant distribution and the abruptness of interfaces are of utmost importance for performances. Electron Tomography was combined to APT to investigate such GAA devices [48]. These nano-devices are based on…”

Section: Three-dimensional Elemental Map Of Chemical Species Within Gmentioning

confidence: 99%

Atom probe tomography in nanoelectronics

Blavette

Duguay

2014

Eur. Phys. J. Appl. Phys.

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Abstract. The role of laser assisted atom probe tomography (APT) in microelectronics is discussed on the basis of various illustrations related to SiGe epitaxial layers, bipolar transistors or MOS nano-devices including gate all around (GAA) devices that were carried out at the Groupe de Physique des Matériaux of Rouen (France). 3D maps as provided by APT reveal the atomic-scale distribution of dopants and nanostructural features that are vital for nanoelectronics. Because of trajectory aberrations, APT images are subjected to distortions and local composition at the nm scale may either be biased. Procedures accounting for these effects were applied so that to correct images.

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“…Along with the dopant control, high precision in dopant characterization will also be essential for the fabrication. Several characterization techniques such as the atom probe [5], low electron energy EDX, and through-fin SIMS have been studied [6]. * To improve the precision of the SIMS analysis, the realization of both the depth resolution and the sputtering rate stability by a calibration procedure will be significant.…”

Section: Introductionmentioning

confidence: 99%

Development of a Certified Reference Material with Delta-Doped Boron Nitride Layers for Surface Depth-Profile Analysis

Kurokawa

Azuma

Terauchi

et al. 2016

e-J. Surf. Sci. Nanotech.

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The certified reference material (NMIJ CRM 5206-a) is composed of a Si substrate with homogenously doped arsenic, and multiple alternately deposited boron nitride (BN) layers and Si layers. The designed thicknesses of the Si and BN layers were 8 nm and 0.05 nm, respectively. The thickness of each layer was measured using X-ray reflectometry (XRR), and the periodicity of the distance between the delta BN layers was determined to be 8.3 nm. The expanded uncertainty was 0.2 nm and was calculated using a coverage factor (k) of two that gives a level of confidence of approximately 95%. The concentration of the As atoms in the Si substrate, measured by instrumental neutron activation analysis (INAA) and inductively coupled plasma-mass spectrometry (ICP-MS), was determined to be 0.80 g/kg with an uncertainty of 0.04 g/kg (k = 2). For the calibration of the developed reference material, three institutes with two types of secondary ion mass spectrometry (SIMS) instruments derived the SIMS depth profiles of the implanted arsenic atoms. The results were compared, and it was observed that the relative standard deviation (RSD) of the profile parameters was approximately 10%.

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3D analysis of advanced nano-devices using electron and atom probe tomography

Cited by 54 publications

References 39 publications

The device characteristics of missing LDD implantation via nanoprobing techniques for localized failure analysis

The device characteristics of missing LDD implantation via nanoprobing techniques for localized failure analysis

Atom probe tomography in nanoelectronics

Development of a Certified Reference Material with Delta-Doped Boron Nitride Layers for Surface Depth-Profile Analysis

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