Thin films of 6,13-pentacenequinone (PQ) on native silicon oxide (SiO x ) grown in a yet unsolved surface-induced thin-film polymorph were investigated by X-ray diffraction reciprocal-space mapping yielding triclinic unit-cell parameters of a = 4.69 A ˚, b = 5.99 A ˚, c = 13.45 A ˚, R = 77.8°, β = 84.1°, and γ = 81.1°. Most notably, this polymorph exhibits only one molecule per unit cell in contrast to the single crystal phase with two molecules per unit cell. Therefore, in contrast to the single crystal phase, PQ does not exhibit a herringbone arrangement in the substrate-induced thin-film polymorph. The orientation of the molecule within the unit cell was modeled via force field calculations yielding a reliable full structure solution. Being corroborated by a direct derivation from the experimental intensities, this procedure represents a reliable pathway for full structure solutions of thin-film polymorphs. The results allowed for comparative electronic structure calculations of the two PQ polymorphs, which demonstrate a significantly wider dispersion of the lowest unoccupied molecular orbital-derived band (conduction band) in the surface-induced phase, which might be beneficial for electron transport.