3D MEMS and IC Integration

Taklo, Maaike M. Visser; Lietaer, Nicolas; Tofteberg, Hannah; Seppänen, Timo; Prainsack, Josef; Weber, Josef; Ramm, Peter

doi:10.1557/proc-1112-e04-04

Cited by 8 publications

(6 citation statements)

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“…The conductive material used to fill the via can be different than what is used within the circuit layers and must be chosen for the application. Following via formation, some devices require high temperature processing, such as annealing of piezoelectric layers in RF switches, cantilever sensors, and endoscopic acoustic imaging devices [1]. Fabrication of contacts below this piezoelectric layer requires using a material that can withstand annealing temperatures of 700 degrees C without significant degradation.…”

Section: Platinum Cmp For High Temperature Viasmentioning

confidence: 99%

Impact of Business Trends on Advanced CMP Process Technology Development

Rhoades¹

2016

ECS Trans.

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The technology of chemical mechanical polishing (CMP) is directly influenced by business trends within the semiconductor industry. Companies that manufacture devices and integrated circuits can be grouped into three broad industry segments: leading edge, mainstream or established, and emerging technology. Development of new device architectures, new integration schemes, and ultimately new commercial products are often enabled by development of new and optimized CMP processes. This is illustrated with examples from three different CMP development projects: oxide CMP for advanced silicon substrates with inlaid features requiring sub-nanometer topography, Pt CMP for high temperature vias, and polymer CMP for an advanced packaging interposer design.

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Section: Platinum Cmp For High Temperature Viasmentioning

confidence: 99%

Impact of Business Trends on Advanced CMP Process Technology Development

Rhoades¹

2016

ECS Trans.

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“…As shown in Figure 2 the thinned TRX is mounted on top of the μC. The sensor and the BAW die are flip-chipped on the TRX die using gold stud bumps (9). 9) in order to enhance the robustness of the bond.…”

Section: Process Flowmentioning

confidence: 99%

Miniaturization of a Wireless Sensor Node by Means of 3D Interconnects

et al. 2010

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This work presents an advanced sensor node for direct tire pressure monitoring with an overall size below 1 cm3, where the applied components are arranged in a 3D integrated stack for high compactness, improved thermal behavior, and enhanced robustness for pressure, inertia, and temperature sensing. The utilized through silicon via (TSV) technology is introduced and the wide range of resulting issues for the design of a sensor node are considered. In particular, the radio frequency (RF) characteristics of TSVs are investigated in detail focusing on their electrical efficiency. Finally an optimized TSV design is presented, which allows the connection of a Bulk Acoustic Wave (BAW) resonator with an impedance of 2 kΩ at 2.1 GHz. Thus, all required types of interconnections within the sensor node can be realized by means of the TSV technology.

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“…The electrical connection between the transceiver and the lC is established via TSVs and l-bumps. The BAW die and the sensor are flip-chipped directly on the transceiver using Au stud bumps (Visser Taklo et al 2008). …”

Section: D Integrationmentioning

confidence: 99%

“…The applied temperature sensor is located at the center of the transceiver die and the BAW die is flip-chipped on the transceiver using Au stud bumps (Visser Taklo et al 2008). A temperature difference between the BAW resonators and the temperature sensor may cause malfunctions of the sensor node, since the measured temperature used to calculate the digital tuning codeword to compensate the temperature drift of the BAW resonator no longer matches the actual temperature of the resonator.…”

Section: Operation Under Temperature Variationsmentioning

confidence: 99%

Design issues of BAW employment in 3D integrated sensor nodes

et al. 2009

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In the field of wireless sensor node design a wide range of new potentials are opened by means of emerging 3D integration technologies. These technologies enable the design of highly integrated sensor nodes, but the designers face novel challenges, which specialized communications engineers are not familiar with. This work presents an advanced direct tire pressure monitoring system (TPMS) with an overall size below 1 cm3 applying through silicon vias (TSV) and points out two selected design issues arising due to this high level of integration. At first design issues caused by temperature gradients within the 3D integrated chip stack are presented. Multi physics simulations show that a systematical temperature measurement error is introduced by self heating, which would affect the communication performance if unconsidered. Furthermore the radio frequency (RF) characteristics of TSVs, focusing on their electrical efficiency, are investigated. In particular the behavior of TSVs for connecting a bulk acoustic wave resonator with an impedance of 2 kX at 2.1 GHz is evaluated in detail

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3D MEMS and IC Integration

Cited by 8 publications

References 0 publications

Impact of Business Trends on Advanced CMP Process Technology Development

Impact of Business Trends on Advanced CMP Process Technology Development

Miniaturization of a Wireless Sensor Node by Means of 3D Interconnects

Design issues of BAW employment in 3D integrated sensor nodes

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