3D Monte Carlo simulation of transport in electro‐statically confined silicon nanochannels

Abstract

This study investigates transport and electrostatic behavior of quasi 1D nanowires adopting a relatively simple planar fabrication technique. The confined conduction channel is created by etching an oxide trench, realizing a T‐gate structure. Since multiple channels are normally needed to realize sufficient current drive in practical applications, the behavior of single and coupled adjacent silicon nanowires is characterized using a 3D quantum corrected Monte Carlo approach. Results indicate that a single T‐gate structure provides over 27% increase in current drive compared to conventional MOSFET at a drain voltage of 1V. In addition, design consideration and recommendation is presented. Cross section of a T‐gate MOSFET. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)